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Composite member its separation method and preparation method of semiconductor substrate by utilization thereof

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0250242 (1999-02-16)
우선권정보 JP-0035820 (1998-02-18)
발명자 / 주소
  • Kazuaki Ohmi JP
  • Kiyofumi Sakaguchi JP
  • Kazutaka Yanagita JP
출원인 / 주소
  • Canon Kabushiki Kaisha JP
대리인 / 주소
    Fitzpatrick, Cella, Harper & Scinto
인용정보 피인용 횟수 : 46  인용 특허 : 11

초록

In order to separate first and second base substrate without cracking them, and use a damaged base substrate again as a semiconductor substrate to enhance a yield, there is disclosed a preparation method of a semiconductor substrate comprising the steps of separating a composite member formed by bon

대표청구항

1. A method of separating a composite member into a plurality of members at a separation area comprising the step of:making a mechanical strength of the separation area non-uniform and a mechanical strength of a peripheral portion of the separation area locally low by forming portions different from

이 특허에 인용된 특허 (11)

  1. Fujimoto Kazuaki,JPX ; Furukawa Hiroshi,JPX ; Kato Hirotaka,JPX, Jig for peeling a bonded wafer.
  2. Tayanaka Hiroshi,JPX, Method for making thin film semiconductor.
  3. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
  4. Yoshizawa, Katsuo; Sato, Tsutomu; Mitani, Kiyoshi; Katayama, Masatake, Method for production of SOI substrate.
  5. Matsushita Takeshi,JPX ; Tayanaka Hiroshi,JPX, Method for separating a device-forming layer from a base body.
  6. Aga Hiroji,JPX ; Mitani Kiyoshi,JPX ; Inazuki Yukio,JPX, Method of fabricating an SOI wafer and SOI wafer fabricated thereby.
  7. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.
  8. Bozler Carl O. (Sudbury MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert W. (Weymouth MA), Method of producing sheets of crystalline material.
  9. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Process for production of semiconductor substrate.
  10. Yonehara Takao (Atsugi JPX), Semiconductor member and process for preparing semiconductor member.
  11. Kwon Oh-Kyong,KRX, Silicon on insulator semiconductor substrate and fabrication method therefor.

이 특허를 인용한 특허 (46)

  1. Kerdiles, Sebastien; Michel, Willy; Schwarzenbach, Walter; Delprat, Daniel, Bonding interface quality by cold cleaning and hot bonding.
  2. Carre, Alain Robert Emile; Garner, Sean Matthew; Waku-Nsimba, Jean, Debonding a glass substrate from carrier using ultrasonic wave.
  3. Aspar,Bernard; Lagahe,Chrystelle; Rayssac,Olivier; Ghyselen,Bruno, Embrittled substrate and method for making same.
  4. Jurine, Jean-Michel; George, Isabelle, High density interconnection test connector especially for verification of integrated circuits.
  5. Takano, Eiji, Manufacturing method for semiconductor device.
  6. Yokokawa, Isao; Noto, Nobuhiko, Method for manufacturing SOI wafer.
  7. Ben Mohamed, Nadia; Maze, Eric, Method for producing a composite structure.
  8. Burghartz, Joachim N.; Appel, Wolfgang; Zimmermann, Martin, Method for producing a thin chip comprising an integrated circuit.
  9. Kerdiles, Sébastien; Michel, Willy; Schwarzenbach, Walter; Delprat, Daniel; Ben Mohamed, Nadia, Method of bonding two substrates.
  10. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  11. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  12. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  13. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  14. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  15. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  16. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  17. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
  18. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
  19. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
  20. Faris, Sadeg M., Method of fabricating vertical integrated circuits.
  21. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  22. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  23. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  24. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  25. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  26. Yamazaki, Shunpei, Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxide insulating layer.
  27. Yamazaki, Shunpei, Method of manufacturing a semiconductor device including thermal oxidation to form an insulating film.
  28. Yonehara, Takao; Sakaguchi, Kiyofumi, Method of manufacturing a thin-film semiconductor device used for a display region and peripheral circuit region.
  29. Yamazaki, Shunpei, Method of manufacturing semiconductor device having island-like single crystal semiconductor layer.
  30. Sakaguchi, Kiyofumi; Yonehara, Takao, Method of separation of semiconductor device.
  31. Yonehara, Takao; Armstrong, Karl J.; Ozkeskin, Fatih Mert, Methods and apparatus for forming semiconductor.
  32. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Nonvolatile memory and electronic apparatus.
  33. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  34. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  35. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  36. Fukunaga,Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  37. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer.
  38. Yamazaki, Shunpei, Semiconductor device.
  39. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Semiconductor device having buried oxide film.
  40. Sekiguchi,Yoshinobu; Yonehara,Takao; Koto,Makoto; Okuda,Masahiro; Shimada,Tetsuya, Semiconductor film manufacturing method and substrate manufacturing method.
  41. Sakaguchi,Kiyofumi; Sato,Nobuhiko, Semiconductor substrate, semiconductor device, and method of manufacturing the same.
  42. Sakaguchi, Kiyofumi, Substrate and manufacturing method therefor.
  43. Sakaguchi, Kiyofumi, Substrate and manufacturing method therefor.
  44. Sakaguchi, Kiyofumi; Yonehara, Takao, Thin-film semiconductor device and method of manufacturing the same.
  45. Yonehara,Takao; Sakaguchi,Kiyofumi, Thin-film semiconductor device and method of manufacturing the same.
  46. Faris,Sadeg M, Vertical integrated circuits.
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