IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0544053
(2000-04-06)
|
발명자
/ 주소 |
- Peter S. Locke
- Kevin S. Petrarca
- Seshadri Subbanna
- Richard P. Volant
|
출원인 / 주소 |
- International Business Machines Corporation
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
22 인용 특허 :
8 |
초록
▼
A process for the electrolytic deposition of a metal, preferably copper or an alloy of copper, directly onto a barrier layer coated on a dielectric layer. The process is advantageous because it electrolytically deposits metal in a pattern that is either the duplicate of a first conductive pattern un
A process for the electrolytic deposition of a metal, preferably copper or an alloy of copper, directly onto a barrier layer coated on a dielectric layer. The process is advantageous because it electrolytically deposits metal in a pattern that is either the duplicate of a first conductive pattern under the dielectric or the inverse image of the first conductive pattern, depending on the first conductive pattern shape. Thus, metal is deposited on the barrier layer duplicating a first conductive pattern under the dielectric layer when the first pattern is a serpentine pattern and the metal deposits in the spaces between the conductive lines of a first conductive pattern of a discrete passive element such as a spiral.
대표청구항
▼
1. A process for controlling the electrolytic deposition of a metal selected from the group consisting of aluminum, nickel, cobalt, silver, gold, palladium, platinum, rhodium, and copper, alloys of copper, aluminum, nickel, cobalt, silver, gold, palladium, platinum, and rhodium, and combinations the
1. A process for controlling the electrolytic deposition of a metal selected from the group consisting of aluminum, nickel, cobalt, silver, gold, palladium, platinum, rhodium, and copper, alloys of copper, aluminum, nickel, cobalt, silver, gold, palladium, platinum, and rhodium, and combinations thereof on a barrier layer comprising a refractory metal, the process comprising:forming a first patterned conductive layer on a support; forming a dielectric layer over the support and the first patterned conductive layer; forming the continuous barrier layer over the dielectric layer; and flowing a current through the barrier layer while the barrier is immersed in an electrolytic bath.
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