$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Process for lift off and transfer of semiconductor devices onto an alien substrate

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
  • H01L-021/46
출원번호 US-0496597 (2000-02-02)
발명자 / 주소
  • Alexander Y Usenko
  • William N. Carr
출원인 / 주소
  • Silicon Wafer Technologies, Inc.
인용정보 피인용 횟수 : 41  인용 특허 : 7

초록

The method of the invention causes fracture of a semiconductor layer containing semiconductor devices from a support layer and requires no masking of the semiconductor device features during an implantation action. The method initially implants protons throughout an entirety of the semiconductor lay

대표청구항

1. A method comprising:implanting protons through at least one semiconductor device and into a layer of semiconductor, wherein the implanted protons form a hydrogen-enriched sub-layer within said layer of semiconductor; heating said layer of semiconductor to a temperature that is sufficient to cause

이 특허에 인용된 특허 (7)

  1. Lee Sahng Kyoo,KRX ; Park Sang Kyun,KRX, Method for fabricating semiconductor wafers.
  2. Gmitter Thomas J. (Lakewood NJ) Yablonovitch Eli (Middletown NJ), Method for lifting-off epitaxial films.
  3. Yoder Max N. (Falls Church VA), Method of forming a hyperabrupt interface in a GaAs substrate.
  4. Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Process for the production of a structure having a thin semiconductor film on a substrate.
  5. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  6. Ogura Atsushi,JPX, Silicon-on-insulator (SOI) substrate and method of fabricating the same.
  7. Srikrishnan Kris V., Smart-cut process for the production of thin semiconductor material films.

이 특허를 인용한 특허 (41)

  1. He, Gang; Higashi, Gregg, Continuous feed chemical vapor deposition.
  2. Currie,Matthew T., Control of strain in device layers by prevention of relaxation.
  3. Currie,Matthew T., Control of strain in device layers by selective relaxation.
  4. Gmitter, Thomas; He, Gang, Epitaxial lift off stack having a multi-layered handle and methods thereof.
  5. Gmitter, Thomas; He, Gang; Hegedus, Andreas, Epitaxial lift off stack having a non-uniform handle and methods thereof.
  6. Gmitter, Thomas; He, Gang; Hegedus, Andreas, Epitaxial lift off stack having a non-uniform handle and methods thereof.
  7. Archer, Melissa; Atwater, Harry; Gmitter, Thomas; He, Gang; Hegedus, Andreas; Higashi, Gregg; Sonnenfeldt, Stewart, Epitaxial lift off stack having a pre-curved handle and methods thereof.
  8. Archer, Melissa; Atwater, Harry; Gmitter, Thomas; He, Gang; Hegedus, Andreas; Higashi, Gregg; Sonnenfeldt, Stewart, Epitaxial lift off stack having a pre-curved handle and methods thereof.
  9. Gmitter, Thomas; He, Gang; Hegedus, Andreas, Epitaxial lift off stack having a unidirectionally shrunk handle and methods thereof.
  10. Archer, Melissa; Atwater, Harry; Gmitter, Thomas; He, Gang; Hegedus, Andreas; Higashi, Gregg; Sonnenfeldt, Stewart, Epitaxial lift off stack having a universally shrunk handle and methods thereof.
  11. Wu,Kenneth C.; Fitzgerald,Eugene A.; Taraschi,Gianni; Borenstein,Jeffrey T., Etch stop layer system.
  12. Usenko, Alex, Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof.
  13. Currie, Matthew T., Hybrid fin field-effect transistor structures and related methods.
  14. Archer, Melissa, Mesa etch method and composition for epitaxial lift off.
  15. Bernard Aspar FR; Michel Bruel FR; Claude Jaussaud FR; Chrystelle Lagahe FR, Method for producing a thin membrane and resulting structure with membrane.
  16. Clavelier, Laurent; Deguet, Chrystel; Leduc, Patrick; Moriceau, Hubert, Method for transferring chips onto a substrate.
  17. Cheng,Zhiyuan; Fitzgerald,Eugene A.; Antoniadis,Dimitri A., Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers.
  18. Reif,Rafael; Chen,Kuan Neng; Tan,Chuan Seng; Fan,Andy, Method of forming a multi-layer semiconductor structure incorporating a processing handle member.
  19. Washington, Lori D.; Bour, David P.; Higashi, Gregg; He, Gang, Method of high growth rate deposition for group III/V materials.
  20. He, Gang; Higashi, Gregg; Sorabji, Khurshed; Hamamjy, Roger; Hegedus, Andreas; Archer, Melissa; Atwater, Harry; Sonnenfeldt, Stewart, Methods and apparatus for a chemical vapor deposition reactor.
  21. Fitzgerald,Eugene; Currie,Matthew, Methods for fabricating strained layers on semiconductor substrates.
  22. Langdo, Thomas A.; Currie, Matthew T.; Hammond, Richard; Lochtefeld, Anthony J.; Fitzgerald, Eugene A., Methods for forming III-V semiconductor device structures.
  23. Langdo, Thomas A.; Currie, Matthew T.; Hammond, Richard; Lochtefeld, Anthony J.; Fitzgerald, Eugene A., Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain.
  24. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes.
  25. Currie,Matthew T., Methods of forming hybrid fin field-effect transistor structures.
  26. Langdo, Thomas A.; Currie, Matthew T.; Hammond, Richard; Lochtefeld, Anthony J.; Fitzgerald, Eugene A., Methods of forming strained-semiconductor-on-insulator device structures.
  27. Lochtefeld,Anthony J.; Langdo,Thomas A.; Hammond,Richard; Currie,Matthew T.; Braithwaite,Glyn; Fitzgerald,Eugene A., Methods of forming strained-semiconductor-on-insulator finFET device structures.
  28. He, Gang; Hegedus, Andreas, Multiple stack deposition for epitaxial lift off.
  29. Ramappa, Deepak; Blake, Julian G., Pressurized treatment of substrates to enhance cleaving process.
  30. Cheng, Zhi-Yuan; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; Hoyt, Judy L., Process for producing semiconductor article using graded epitaxial growth.
  31. Cheng, Zhiyuan; Fitzgerald, Eugene A.; Antoniadis, Dimitri A., Semiconductor device structure.
  32. Ohkubo, Yasunori, Semiconductor substrate, semiconductor device, and processes of production of same.
  33. Ghyselen, Bruno; Letertre, Fabrice, Semiconductor substrates having useful and transfer layers.
  34. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained germanium-on-insulator device structures.
  35. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator device structures.
  36. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator device structures.
  37. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator device structures with elevated source/drain regions.
  38. Langdo,Thomas A.; Currie,Matthew T.; Braithwaite,Glyn; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator finFET device structures.
  39. Gmitter, Thomas; He, Gang; Archer, Melissa; Hegedus, Andreas, Tape-based epitaxial lift off apparatuses and methods.
  40. Gmitter, Thomas; He, Gang; Archer, Melissa; Hegedus, Andreas, Tape-based epitaxial lift off apparatuses and methods.
  41. He, Gang; Hegedus, Andreas, Tiled substrates for deposition and epitaxial lift off processes.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트