초록 ▼

A combined interconnect system is formed comprising a Cu or Cu alloy feature electrically connected an Al or Al alloy feature through a composite comprising a first layer containing tantalum and aluminum contacting the Al or Al alloy feature, a second layer containing tantalum nitride, a third layer

A combined interconnect system is formed comprising a Cu or Cu alloy feature electrically connected an Al or Al alloy feature through a composite comprising a first layer containing tantalum and aluminum contacting the Al or Al alloy feature, a second layer containing tantalum nitride, a third layer containing tantalum nitride having an nitrogen content less than that of the second layer, e.g. amorphous tantalum nitride, and a fourth layer comprising tantalum or tantalum nitride having a nitrogen content less than that of the third layer. Embodiments include forming a dual damascene opening in the dielectric layer exposing a lower Al or Al alloy feature, depositing a layer of tantalum in contact with the Al or Al alloy feature, sequentially depositing the second, third and fourth layers, filling the opening with Cu or Cu alloy layer, CMP and heating to diffuse aluminum from the underlying feature into the first tantalum layer.

대표청구항 ▼

1. A semiconductor device comprising:an aluminum (Al) or Al alloy feature; a copper (Cu) or Cu alloy feature; and a composite electrically connecting the Al or Al alloy feature to the Cu or Cu alloy feature, the composite comprising: a first layer, comprising tantalum and aluminum, in contact with a

1. A semiconductor device comprising:an aluminum (Al) or Al alloy feature; a copper (Cu) or Cu alloy feature; and a composite electrically connecting the Al or Al alloy feature to the Cu or Cu alloy feature, the composite comprising: a first layer, comprising tantalum and aluminum, in contact with a surface of the Al or Al alloy feature; a second layer comprising tantalum nitride on the first layer; a third layer comprising tantalum nitride, having a nitrogen content less than the tantalum nitride of the second layer, on the second layer; and a fourth layer, comprising tantalum or tantalum nitride having a nitrogen content less than the tantalum nitride of the third layer, on the third layer and in contact with a surface the Cu or Cu alloy feature.