초록 ▼

A method of using diamond or a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate using a damascene process flow. The diamond or diamond-like carbon layer is deposited onto the surface of the substrate before patterning the metal level. A

A method of using diamond or a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate using a damascene process flow. The diamond or diamond-like carbon layer is deposited onto the surface of the substrate before patterning the metal level. A protective layer is then deposited over the diamond or diamond-like carbon polish-stop layer, wherein such protective layer may act as an additional polish-stop layer. Together, the diamond or diamond-like carbon polish-stop layer and the protective layer are used as a hard-mask for patterning the trenches that will become the metal features, wherein such protective layer protects the diamond or diamond-like carbon polish-stop layer during the patterning process. After deposition of a conductive metal layer, the dielectric substrate is polished to remove excess conductive material, as well as topography. In the polishing process, the diamond or diamond-like carbon polish-stop layer and any remaining protective layer are used as polish-stop layers. The diamond or diamond-like carbon polish-stop layer allows for an improved planar surface, thereby resulting in a sufficient decrease in topography at the surface of the inter-level dielectric.

대표청구항 ▼

1. A method of planarizing a semiconductor comprising:forming a first layer of a first material comprising a diamond-like carbon material on a surface of a substrate, said first layer comprising a first polish stop; forming a second layer of a second material on the surface of said first layer, said

1. A method of planarizing a semiconductor comprising:forming a first layer of a first material comprising a diamond-like carbon material on a surface of a substrate, said first layer comprising a first polish stop; forming a second layer of a second material on the surface of said first layer, said second layer comprising a hard-mask and a second polish stop; patterning said surface of said substrate thereby forming a plurality of openings therein; forming a third layer of a third material on the surface of said substrate thereby at least filling a set of said plurality of openings; and planarizing said surface of said substrate to remove at least any excess of said third layer, the planarization removing said second layer, thereby stopping at said first layer, therein said first layer allowing over-planarization of the surface of the substrate to achieve an overall substantial planarity of said surface.