초록 ▼

Process for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separative interlayer comprises a thin quasi-continuous gaseous layer and said interlayer is obtained by gettering a

Process for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separative interlayer comprises a thin quasi-continuous gaseous layer and said interlayer is obtained by gettering a monatomic hydrogen into a preformed buried defect-rich layer preferably obtained by implantation. The monatomic hydrogen is preferably inserted into the substrate by electrolytic means.

대표청구항 ▼

1. A process comprising:disordering a first region of a first substrate; diffusing hydrogen into said first region of said first substrate by an electrolytic process; adding a first amount of energy to said first region of said first substrate; and separating at least a part of said first region fro

1. A process comprising:disordering a first region of a first substrate; diffusing hydrogen into said first region of said first substrate by an electrolytic process; adding a first amount of energy to said first region of said first substrate; and separating at least a part of said first region from said first substrate.