초록 ▼

A silicon-on-oxide MOS transistor is disclosed which has an implanted region on the source side of the gate electrode for making contact with the body node. A contact region of the same conductivity type as the body is formed in the source region with a minimum spacing from the patterned gate corner

A silicon-on-oxide MOS transistor is disclosed which has an implanted region on the source side of the gate electrode for making contact with the body node. A contact region of the same conductivity type as the body is formed in the source region with a minimum spacing from the patterned gate corner such that the dopant of the implant region does not diffuse into the gate and thereby destroy the transistor

대표청구항 ▼

1. A transistor, comprising:a gate capacitively coupled to a fully-insulated semiconductor body region which includes a first-conductivity-type channel region interposed between source and drain diffusions which are both of a second conductivity type; a first-conductivity-type body-tie diffusion whi

1. A transistor, comprising:a gate capacitively coupled to a fully-insulated semiconductor body region which includes a first-conductivity-type channel region interposed between source and drain diffusions which are both of a second conductivity type; a first-conductivity-type body-tie diffusion which ohmically connects said body region to said source, and which is set back from said gate farther than said drain diffusion.