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A write circuit supplies a write potential that is higher than a power supply potential to memory cells of a semiconductor memory device. The write circuit includes a reference potential generator that generates a reference potential having a substantially constant potential difference from one of a

A write circuit supplies a write potential that is higher than a power supply potential to memory cells of a semiconductor memory device. The write circuit includes a reference potential generator that generates a reference potential having a substantially constant potential difference from one of a power supply potential and a ground potential. A voltage-controlled oscillator (VCO) connected to the reference potential generator receives the reference potential and generates an oscillation clock signal in proportion to the reference potential. A booster connected to the VCO generates the write potential by piling up the oscillation clock signal onto the power supply potential in a multistage manner. A write controller is connected to the booster and supplies the write potential to the memory cells in accordance with a write clock.

대표청구항 ▼

1. A write circuit for supplying a write potential that is higher than a power supply potential to memory cells of a semiconductor memory device, comprising:a voltage-controlled oscillator (VCO) for receiving the power supply potential and generating an oscillation clock signal having an oscillation

1. A write circuit for supplying a write potential that is higher than a power supply potential to memory cells of a semiconductor memory device, comprising:a voltage-controlled oscillator (VCO) for receiving the power supply potential and generating an oscillation clock signal having an oscillation clock frequency that fluctuates in response to a reference potential; a reference potential generator, connected to the VCO, for generating the reference potential, wherein the reference potential generator maintains the reference potential at a substantially constant level such that the VCO generates the oscillation clock signal having a constant oscillation clock frequency; a booster, connected to the VCO, for generating the write potential by piling up the oscillation clock signal onto the power supply potential in a multistage manner; and a write controller, connected to said booster, for supplying the write potential to the memory cells in accordance with a write clock.