초록 ▼

An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus protecting th

An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus protecting the peripheral driver circuit from external moisture and contaminants. This enhances the long-term reliability of the peripheral driver circuit. Pixel TFTs are arranged in pixel regions. The leads going from the TFTs forming the peripheral driver circuit to the pixel TFTs are shortened. This results in a reduction in the resistance. As a result, the display characteristics are improved.

대표청구항 ▼

1. An active matrix type display device comprising:a substrate having an insulating surface; a sealing material applied to an outer frame of said substrate; pixel electrodes; a plurality of first thin film transistors formed in said active matrix circuit, each of said first thin film transistors com

1. An active matrix type display device comprising:a substrate having an insulating surface; a sealing material applied to an outer frame of said substrate; pixel electrodes; a plurality of first thin film transistors formed in said active matrix circuit, each of said first thin film transistors comprising: a semiconductor island comprising crystalline silicon formed over said substrate; a channel formation region in said semiconductor island; a pair of impurity regions formed in said semiconductor island wherein said pair of impurity regions contain one conductivity type impurity at a first concentration; a pair of lightly doped regions formed between said channel formation region and said pair of impurity regions, respectively, wherein said pair of lightly doped regions contain said one conductivity type impurity at a concentration smaller than said first concentration, a gate insulating film adjacent to said semiconductor island; a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween, wherein each boundary between said channel formation region and said pair of lightly doped regions is substantially aligned with side edges of said gate electrode, a driving circuit comprising at least one N-channel type thin film transistor and at least one P-channel type thin film transistor for driving said active matrix circuit, said P-channel type thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate; a channel formation region formed in said semiconductor island; a pair of source and drain regions having a p-type conductivity in said semiconductor island with said channel formation region interposed therebetween; and a gate electrode adjacent to said semiconductor island with a gate insulating film interposed therebetween, wherein said pair of source and drain regions contain both boron and phosphorus, wherein an integrated circuit for controlling said driving circuit is incorporated into said sealing material.