초록 ▼

A method for making, and a programmable structure for use in a semiconductor chip is provided. The method includes forming a lower metallization layer, and forming an upper metallization layer. The upper metallization layer has a first portion and a second portion. An eroded via is formed between th

A method for making, and a programmable structure for use in a semiconductor chip is provided. The method includes forming a lower metallization layer, and forming an upper metallization layer. The upper metallization layer has a first portion and a second portion. An eroded via is formed between the lower metallization layer and the first portion of the upper metallization layer, and a conductive via is formed between the lower metallization layer and the second portion of the upper metallization layer. The method then includes applying a current between the lower metallization layer and the second portion of the upper metallization layer. The current is configured to cause electromigration in the lower metallization layer such that some of the electromigration fills the eroded via between the lower metallization layer and first portion of the upper metallization layer. The current, if programming is desired, is applied from pads of the semiconductor chip either directly or by way of a programming circuit.

대표청구항 ▼

1. A programmable structure, comprising:a first lower metallization line defined on a first metallization layer; a second lower metallization line defined on the first metallization layer, the first and second lower metallization lines being electrically connected; a first upper metallization line d

1. A programmable structure, comprising:a first lower metallization line defined on a first metallization layer; a second lower metallization line defined on the first metallization layer, the first and second lower metallization lines being electrically connected; a first upper metallization line defined on a second metallization layer; a second upper metallization line defined on the second metallization layer; a conductively filled via electrically connecting the second lower metallization line to the second upper metallization line; an eroded via defined between the first lower metallization line and the first upper metallization line; and an electrical connection being defined between a first point on the second upper metallization line and a second point on the first lower metallization line, the electrical connection being capable of forming an electron flow originating at the second point of the first lower metallization line and leading to the first point of the second upper metallization line, such that electron flow causes metallization of the first lower metallization line to flow into the eroded via and form a hard-wired link.