초록 ▼

A substrate (901 in FIGS. 1A and 1B) is overlaid with a base film (902), an amorphous semiconductor film (903) and a first protective insulating film (904), and a thermal conduction layer (905) having a light transmissivity is selectively formed. Subsequently, the amorphous semiconductor film (903)

A substrate (901 in FIGS. 1A and 1B) is overlaid with a base film (902), an amorphous semiconductor film (903) and a first protective insulating film (904), and a thermal conduction layer (905) having a light transmissivity is selectively formed. Subsequently, the amorphous semiconductor film (903) is crystallized by laser annealing. The thermal conduction layer (905) functions to control the outflow rate of heat from the semiconductor film (903), and a crystalline semiconductor film centering round a region formed with the thermal conduction layer (905) is prepared by utilizing the difference of temperature distributions over the substrate (901). In the crystalline semiconductor film thus prepared, the location and size of a crystal grain have been controlled. A TFT capable of high-speed operation is realized by employing the crystalline semiconductor film as the channel forming region of the TFT.

대표청구항 ▼

1. A method of fabricating a semiconductor device, comprising the steps of:forming a base film comprising an insulating film having a thermal nductivity of 10 Wm-1K-1 or less in contact with a substrate; forming an amorphous semiconductor film comprising silicon on said base film; forming a first pr

1. A method of fabricating a semiconductor device, comprising the steps of:forming a base film comprising an insulating film having a thermal nductivity of 10 Wm-1K-1 or less in contact with a substrate; forming an amorphous semiconductor film comprising silicon on said base film; forming a first protective insulating layer on said amorphous semiconductor film; selectively forming a thermal conduction layer having a thermal conductivity of 10 Wm-1K-1 or more on said first protective insulating layer; irradiating a laser beam from above said first protective insulating layer and said thermal conduction layer to crystallize said amorphous semiconductor film and to form a crystalline semiconductor film which has a crystal grain centering round said thermal conduction layer; selectively etching said crystalline semiconductor film to form an insular semiconductor film comprising a single crystal structure; and hydrogenating said insular semiconductor film to introduce hydrogen into said insular semiconductor film.