초록 ▼

A damascene interconnect containing a dual etch stop/diffusion barrier. The conductive material of the damascene interconnect is capped with a conductive metal diffusion barrier cap, typically using electroless deposition, and, optionally, with a dielectric etch-stop layer. An optional chemical mech

A damascene interconnect containing a dual etch stop/diffusion barrier. The conductive material of the damascene interconnect is capped with a conductive metal diffusion barrier cap, typically using electroless deposition, and, optionally, with a dielectric etch-stop layer. An optional chemical mechanical polish-stop layer may also be present. The different methods of the invention allow the CMP stop, reactive-ion etch stop, and metal diffusion barrier requirements of the different layers to be decoupled. A preferred conductive material is copper.

대표청구항 ▼

1. A method comprising the steps of:(A) depositing a dielectric layer on a substrate; (B) depositing a chemical mechanical polish-stop layer on the dielectric layer; (C) forming an opening through the chemical mechanical polish-stop layer and at least partially in the dielectric layer; (D) depositin

1. A method comprising the steps of:(A) depositing a dielectric layer on a substrate; (B) depositing a chemical mechanical polish-stop layer on the dielectric layer; (C) forming an opening through the chemical mechanical polish-stop layer and at least partially in the dielectric layer; (D) depositing a conductive liner in the opening; (E) depositing a conductive material in the opening: (F) removing excess liner and excess conductive material by chemical mechanical polishing, with at least some of the chemical mechanical polish-stop layer remaining and not removed; and (G) depositing a conductive metal diffusion barrier cap on the conductive material.