초록 ▼

An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14%

An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.

대표청구항 ▼

1. A process for producing a semiconductor device comprisinga step of forming an intermetal insulating film using a mixed gas comprising a vapor of monomethyltriethoxysilane represented by the formula: RSi(OR')3, wherein R is a methyl group and R' is an ethyl group, and a non-oxidizing gas by means

1. A process for producing a semiconductor device comprisinga step of forming an intermetal insulating film using a mixed gas comprising a vapor of monomethyltriethoxysilane represented by the formula: RSi(OR')3, wherein R is a methyl group and R' is an ethyl group, and a non-oxidizing gas by means of a plasma chemical vapor deposition method, and a step of forming wires.