$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Apparatus for controlling polymerized teos build-up in vacuum pump lines

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • H01L-021/00
  • B01D-024/00
출원번호 US-0782105 (2001-02-12)
발명자 / 주소
  • Paul Dozoretz
  • Youfan Gu
출원인 / 주소
  • MKS Instruments, Inc.
대리인 / 주소
    James R. Young
인용정보 피인용 횟수 : 8  인용 특허 : 21

초록

A TEOS trap for controlling TEOS polymerization from reaction furnace effluent in a vacuum pump line a SiO2 CVD process includes a molecular species-selective flow impeding medium that adsorbs and retains TEOS and water molecules from the effluent long enough to consume substantially all the water m

대표청구항

1. A TEOS trap for preventing build-up of liquid and solid phase SiO2-rich TEOS polymers in a pump line that carries reaction furnace effluent laden with gaseous TEOS and water molecules along with gaseous ethylene and other effluent molecules, comprising:a housing enclosing a chamber, said housing

이 특허에 인용된 특허 (21)

  1. Hackenberg John J., Device and method for improving corrosion resistance and etch tool integrity in dry metal etching.
  2. Obuchi Akira (Tsukuba JPX) Yoshiyama Hidenori (Tsukuba JPX) Ohi Akihiko (Tsukuba JPX) Aoyama Hyogoro (Tsukuba JPX) Ohuchi Hideo (Tsukuba JPX) Ogata Atsushi (Tsukuba JPX) Mizuno Koichi (Ibaraki JPX) M, Exhaust gas cleaner.
  3. Gu Youfan ; Hauschultz Dana S., Fluid cooled trap.
  4. Robles Stuardo ; Sivaramakrishnan Visweswaren ; Galiano Maria ; Kithcart Victoria, Method and apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films.
  5. Stoltenberg Kevin J. (8090 - 205th St. East Hastings MN 55033), Method and apparatus for improving the yield of integrated circuit devices.
  6. Gu Youfan, Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace.
  7. Karger Robert (Dortmund DEX) Dungs Horst (Herne DEX), Method for cooling and separating chlorides and fluorides from ammoniacal gas.
  8. Kurita Naoyasu,JPX ; Azumi Takayoshi,JPX ; Onozawa Kazuhisa,JPX ; Watanabe Tsuyoshi,JPX ; Sasajima Mitsutoshi,JPX ; Yamada Naoki,JPX, Method for processing waste gas exhausted from chemical vapor and deposition equipment.
  9. Ogawa Hiroshi,JPX, Method of cleaning vacuum processing apparatus.
  10. Young Walter L. (Tulsa OK) Douglas C. J. (Tulsa OK) Connally Carl A. (Tulsa OK) Cheek Robert L. (Tulsa OK), Multi-stage processing and concentration of solutions.
  11. Parry Robert W. (Salt Lake City UT) Baumann John A. (Ossining NY) Schachter Rozalie (Flushing NY), Pnictide trap for vacuum systems.
  12. Jeon Jae-sun,KRX ; Kim Won-yeong,KRX ; Yang Yun-mo,KRX ; Chae Seung-ki,KRX, Semiconductor device manufacturing apparatus employing vacuum system.
  13. Shinriki Hiroshi,JPX ; Komiya Takayuki,JPX ; Yamamoto Hiroshi,JPX, Semiconductor device with contact structure and method of manufacturing the same.
  14. Bellows Craig A. ; Vines Landon B., Semiconductor wafer manufacturing process with high-flow-rate low-pressure purge cycles.
  15. Yamaguchi Katsunobu (Yokohama JPX) Kurihara Tateo (Yokohama JPX) Yanai Isamu (Yokosuka JPX) Kikuchi Kazuo (Yokosuka JPX) Saito Tomoo (Yokohama JPX) Hamanaka Suguru (Yokohama JPX) Nagai Teruo (Chigasa, Shell-and-tube apparatus having an intermediate tube plate.
  16. Miyagi Katsushin (Sagamihara JPX) Yokokawa Osamu (Kanagawa JPX) Okada Yoshitaka (Sagamihara JPX) Nagasaki Ichiro (Yokohama JPX) Hashimoto Akira (Yokohama JPX), Trap device for vapor phase reaction apparatus.
  17. Jang Syun-Ming,TWX ; Chen Ying-Ho,TWX ; Yu Chen-Hua,TWX, Trench filling method employing oxygen densified gap filling silicon oxide layer formed with low ozone concentration.
  18. Gutlhuber Friedrich (Metten DEX), Tubular reactor and method.
  19. Kumada Masatoshi (Kawasaki JPX) Nakagawa Koichi (Kawasaki JPX), Vacuum extraction system for chemical vapor deposition reactor vessel and trapping device incorporated therein.
  20. Yang Vince W. H.,TWX, Vacuum pump filter for use in a semiconductor system.
  21. Persyn Steven C., Vertical LPCVD furnace with reversible manifold collar and method of retrofitting same.

이 특허를 인용한 특허 (8)

  1. Sneh, Ofer, ALD apparatus and method.
  2. Sneh, Ofer, ALD apparatus and method.
  3. Sneh, Ofer, ALD apparatus and method.
  4. Sneh, Ofer, ALD apparatus and method.
  5. Park, Jun-Sig, Apparatus and method for producing a semiconductor device including a byproduct control system.
  6. Aviram, Michael; Dornfeld, Leslie, Compositions and methods using pomegranate extracts.
  7. Saito, Masayuki, Low-pressure CVD apparatus and method of manufacturing a thin film.
  8. Gu,Youfan, Method and apparatus for preventing products of TiCLand NHor other feed gas reactions from damaging vacuum pumps in TiN or other deposition systems.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트