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Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structure 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
출원번호 US-0413483 (1999-10-06)
우선권정보 FR-0013010 (1998-10-16)
발명자 / 주소
  • Bernard Aspar FR
  • Michel Bruel FR
  • Eric Jalaguier FR
출원인 / 주소
  • Commissariat a l'Atomique FR
대리인 / 주소
    Burns Doane Swecker & Mathis LLP
인용정보 피인용 횟수 : 29  인용 특허 : 7

초록

A structure comprising a thin layer (2) that can be integral with a support (3), the thin layer being a layer of a semiconductor material made insulating by ion implantation except for at least one zone that permits a vertical electrical connection through the entire thickness of the thin layer (2).

대표청구항

1. Method of manufacturing a thin layer which operates as at least one vertical electrical connection through its entire thickness, the thin layer comprising a conductive or semiconductive material whose electrical properties are disruptable by ion implantation using a predetermined implantation spe

이 특허에 인용된 특허 (7)

  1. Henley Francois J. ; Cheung Nathan W., Controlled cleaning process.
  2. Kish ; Jr. Fred A. ; Vanderwater David A., Method for bonding compounds semiconductor wafers to create an ohmic interface.
  3. Lee Sahng Kyoo,KRX ; Park Sang Kyun,KRX, Method for fabricating semiconductor wafers.
  4. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.
  5. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  6. Biasse Beatrice,FRX ; Bruel Michel,FRX ; Zussy Marc,FRX, Process for transferring a thin film from an initial substrate onto a final substrate.
  7. Foerstner Juergen A. (Mesa AZ) Hughes Henry G. (Scottsdale AZ) D\Aragona Frank S. (Scottsdale AZ), Silicon film with improved thickness control.

이 특허를 인용한 특허 (29)

  1. Aspar, Bernard; Moriceau, Hubert; Zussy, Marc; Rayssac, Olivier, Detachable substrate or detachable structure and method for the production thereof.
  2. Aspar,Bernard; Lagahe,Chrystelle; Rayssac,Olivier; Ghyselen,Bruno, Embrittled substrate and method for making same.
  3. Lagahe,Chrystelle; Aspar,Bernard; Beaumont,Aur?lie, Formation of a semiconductor substrate that may be dismantled and obtaining a semiconductor element.
  4. Joly, Jean-Pierre; Ulmer, Laurent; Parat, Guy, Integrated circuit on high performance chip.
  5. Bruel, Michel, Method and device for fabricating a layer in semiconductor material.
  6. Fournel, Franck; Moriceau, Hubert; Lagahe, Christelle, Method for making a stressed structure designed to be dissociated.
  7. Deguet, Chrystel; Clavelier, Laurent, Method for making a thin-film element.
  8. Aspar, Bernard; Lagahe, Christelle; Ghyselen, Bruno, Method for making thin layers containing microcomponents.
  9. Tauzin, Aurélie; Dechamp, Jérôme; Mazen, Frédéric; Madeira, Florence, Method for preparing thin GaN layers by implantation and recycling of a starting substrate.
  10. Nguyen, Nguyet-Phuong; Cayrefourcq, Ian; Lagahe-Blanchard, Christelle; Bourdelle, Konstantin; Tauzin, Aurélie; Fournel, Franck, Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation.
  11. Nguyen, Nguyet-Phuong; Cayrefourcq, Ian; Lagahe-Blanchard, Christelle, Method of catastrophic transfer of a thin film after co-implantation.
  12. Cayrefourcq,Ian; Mohamed,Nadia Ben; Lagahe Blanchard,Christelle; Nguyen,Nguyet Phuong, Method of detaching a thin film at moderate temperature after co-implantation.
  13. Tauzin, Aurélie; Faure, Bruce; Garnier, Arnaud, Method of detaching a thin film by melting precipitates.
  14. Deguet, Chrystel; Clavelier, Laurent; Dechamp, Jerome, Method of transferring a thin film onto a support.
  15. Fournel, Franck, Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer.
  16. Letertre, Fabrice, Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods.
  17. Letertre, Fabrice, Methods of fabricating semiconductor structures and devices with strained semiconductor material.
  18. Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
  19. Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
  20. Sadaka, Mariam; Aspar, Bernard; Blanchard, Chrystelle Lagahe, Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices.
  21. Agarwal, Aditya; Sivaram, Srinivasan; Vyvoda, Michael, Methods of transferring a lamina to a receiver element.
  22. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Process for the transfer of a thin film.
  23. Moriceau,Hubert; Bruel,Michel; Aspar,Bernard; Maleville,Christophe, Process for the transfer of a thin film.
  24. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Process for the transfer of a thin film comprising an inclusion creation step.
  25. Lin, Jing-Cheng; Wu, Chih-Wei; Lu, Szu Wei; Jeng, Shin-Puu; Yu, Chen-Hua, Semiconductor device and method of dicing semiconductor devices.
  26. Sinha, Nishant; Sandhu, Gurtej S.; Smythe, John, Semiconductor material manufacture.
  27. Letertre, Fabrice, Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer.
  28. Moriceau, Hubert; Aspar, Bernard; Margail, Jacques, Stacked structure and production method thereof.
  29. Tauzin,Aur��lie, Thin film splitting method.
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