초록 ▼

The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as -60.degree. C. or less. Then the Si su

The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as -60.degree. C. or less. Then the Si substrate is heated to recover the implantation defects caused by the ion-implantation. Such a combination of the low temperature ion-implantation and the annealing processes is repeated as required.

대표청구항 ▼

1. A method for manufacturing a semiconductor device having an ion-implanted source drain diffusion region with a p-n junction comprising:performing an ion-implantation to a semiconductor substrate arranged within an end station of an ion-implantation apparatus, said end station having a heat sink w

1. A method for manufacturing a semiconductor device having an ion-implanted source drain diffusion region with a p-n junction comprising:performing an ion-implantation to a semiconductor substrate arranged within an end station of an ion-implantation apparatus, said end station having a heat sink which is capable of lowering the temperature of surface of the semiconductor substrate; collecting molecules by using a heat trap which is located in the end station so that the heat trap collects molecules in the end station wherein a valve is connected between the end station and a beam line which an ion-beam passes; and annealing the semiconductor substrate by a rapid thermal annealing apparatus, the rapid thermal annealing apparatus being capable of heating at a rate of 10.degree. C./sec or more.