초록 ▼

The present invention allows optimum filling of void spaces typically found in skutterudite type crystal lattice structures associated with various semiconductor materials. Selective filling provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devi

The present invention allows optimum filling of void spaces typically found in skutterudite type crystal lattice structures associated with various semiconductor materials. Selective filling provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devices for electrical power generation and/or cooling applications. By selectively filling a portion of the void spaces associated with skutterudite type crystal lattice structure, reductions in thermal conductivity of the resulting semiconducting material may be optimized while concurrently minimizing any reduction in electrical properties of the resulting semiconductor materials, thus maximizing the thermoelectric figure of merit for the associated thermoelectric device. The present invention allows optimizing both the size and type of atoms and/or molecules used to fill void spaces in skutterudite type crystal lattice structure and to optimize the number of void spaces which are filled by such atoms and/or molecules.

대표청구항 ▼

1. A method of preparing a semiconductor compound for use in fabricating thermoelectric elements, the semiconductor compound having a partially filled skutterudite crystal lattice structure comprising:filling a selected portion of normally void subcells by mixing two elements B and A in a selected r

1. A method of preparing a semiconductor compound for use in fabricating thermoelectric elements, the semiconductor compound having a partially filled skutterudite crystal lattice structure comprising:filling a selected portion of normally void subcells by mixing two elements B and A in a selected ratio to form a mixture of the two elements; sealing the mixture of B and A in a container having an inert gas atmosphere and heating the container for a preselected time at a preselected temperature to form an intermediate product; crushing the intermediate product and mixing the crushed intermediate product with a generally stoichiometric ratio of elements X1 and X2 which normally form a binary semiconductor compound having a skutterudite crystal lattice structure to form a second mixture; and heating the second mixture for a second preselected time at a second preselected temperature in a sealed container having an inert gas atmosphere to form the semiconductor compound with the general formula: X41By1A3xX212-3x y selected to be in the range of greater than zero and less than one to fill the selected portion of normally void subcells to optimize the thermoelectric figure of merit.