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Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H04N-003/14
출원번호 US-0969383 (1997-11-13)
발명자 / 주소
  • Richard B. Merrill
  • Richard M. Turner
  • Carver A. Mead
  • Richard F. Lyon
출원인 / 주소
  • Foveon, Inc.
대리인 / 주소
    Sierra Patent Group Ltd
인용정보 피인용 횟수 : 61  인용 특허 : 34

초록

A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal

대표청구항

1. A storage pixel sensor disposed on a semiconductor substrate comprising:a capacitive storage element having a first terminal connected to a fixed potential and a second terminal; a photodiode having a first terminal connected to a first potential and a second terminal; a semiconductor reset switc

이 특허에 인용된 특허 (34)

  1. Dickinson Alexander G. (Neptune NJ) Eid El-Sayed I. (Freehold NJ) Inglis David A. (Long Branch NJ), Active pixel sensor and imaging system having differential mode.
  2. Fossum Eric R. ; Kemeny Sabrina E. ; Pain Bedabrata, Active pixel sensor array with multiresolution readout.
  3. Lee Paul P. (Pittsford NY) Guidash Robert M. (Rush NY) Lee Teh-Hsuang (Webster NY) Stevens Eric G. (Rochester NY), Active pixel sensor integrated with a pinned photodiode.
  4. Cooper Alan N. (Coppell TX) Hynecek Jaroslav (Richardson TX), Apparatus and method for focal plane zoom and pan.
  5. Anagnostopoulos Constantine N. (Mendon NY) Lee Teh-Hsuang (Webster NY) Burkey Bruce C. (Rochester NY) Lavine James P. (Rochester NY), Block readable charge coupled device.
  6. Hynecek Jaroslav (Richardson TX), Bulk charge modulated device photocell.
  7. Hynecek Jaroslav (Richardson TX), Bulk charge modulated device photocell with lateral charge drain.
  8. Hynecek Jaroslav (Richardson TX), Bulk charge modulated device photocell with lateral charge drain.
  9. Hynecek Jaroslav (Richardson TX), Bulk charge modulated transistor threshold image sensor elements and method of making.
  10. Cooper Alan N. (Coppell TX) McCracken William P. (Garland TX) Hynecek Jaroslav (Richardson TX), Bulk charged modulated device (BCMD) image sensors with increased dynamic range.
  11. Hannah Eric C., Camera having an adaptive gain control.
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  13. Caywood John Millard (Richardson TX), Electronic shutter for a charge-coupled imager.
  14. Suzuki Nobuo (Yokohama JPX), Electronic still camera and method of determining exposure time thereof.
  15. Roberts Peter C. T. (Gilbert AZ), Focal plane array imaging device with random access architecture.
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  19. Zeevi Yehoshua Y. (Haifa ILX) Ar Ran G. (Kiryat Bialik ILX) Hilsenrath Oliver (Haifa ILX), Intelligent scan image sensor.
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  23. Sato Yuichi (Tokyo JPX), Non-linear photoelectric converting apparatus with means for changing drainage performance.
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  26. Ackland Bryan D. (Old Bridge NJ) Dickinson Alexander G. (Neptune NJ) Eid El-Sayed I. (Freehold NJ) Inglis David A. (Long Branch NJ), Single-polysilicon CMOS active pixel.
  27. Yonemoto Kazuya,JPX, Solid image pickup unit and video camera employing same.
  28. Imai Masaharu (Ina JPX), Solid state image sensing device with photometry function.
  29. Kyomasu Mikio (Hamamatsu JPX) Tanaka Hitoshi (Hamamatsu JPX) Mizuno Seiichiro (Hamamatsu JPX), Solid state image sensor having variable charge accumulation time period.
  30. Mori Kenji (Tatsuno JPX), Solid state imaging device having a constant pixel integrating period and blooming resistance.
  31. Ando Fumihiko (Yokohama JPX), Solid state photo-electric converting device and solid state imaging apparatus employing it.
  32. Matsunaga Yoshiyuki (Kamakura JPX), Solid-state camera having changeable sensitivity.
  33. Nagashima Yoshitake (Chigasaki JPX), Solid-state image pick-up apparatus having variable magnification of image sizes by changing the image sensor address ra.
  34. Akimoto Hajime (Hachioji JPX) Ozaki Toshifumi (Koganei JPX) Ohba Shinya (Kanagawa JPX), Solid-state imaging device having an amplifying means in the matrix arrangement of picture elements.

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  1. Lauxtermann, Stefan; Israel, Georg Paul, Active cell with analog storage for a CMOS technology photosensitive sensor.
  2. So, Hwang-Young; Lee, Ghun-Jung, Active pixel sensor with electronic shutter.
  3. Funakoshi, Jun; Yamamoto, Katsuyoshi, CMOS image sensor for suppressing degradation of spatial resolution and generating compressed image signals.
  4. Henderson, Robert; Matthew, Purcel; Hurwitz, Jonathan Ephriam David, CMOS image sensors.
  5. Agarwal, Vishnu K., CMOS imager with improved color response.
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  7. Chevallier, Christophe J., CMOS imager with integrated circuitry.
  8. Chevallier, Christophe J., CMOS imager with integrated non-volatile memory.
  9. Hopper, Peter J.; Vashchenko, Vladislav; Lindorfer, Philipp; Strachan, Andy, Circuit and method of forming the circuit having subsurface conductors.
  10. Panicacci, Roger, Dual panel pixel readout in an imager.
  11. Merrill,Richard B., Electronic shutter using buried layers and active pixel sensor and array employing same.
  12. Agarwal, Vishnu K., Forming an imager array having improved color response.
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  58. Koizumi, Toru; Sugawa, Shigetoshi; Kochi, Tetsunobu, Solid-state image pickup device and method of resetting the same.
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