초록 ▼

This invention is a method for die separation of a wafer by ion implantation, wherein the die spacing is reduced and the die separation precision reaches a sub-micron level. The separated dies are obtained by wafer splitting after heat treatment and have cleavage roughness at a nano-meter level. The

This invention is a method for die separation of a wafer by ion implantation, wherein the die spacing is reduced and the die separation precision reaches a sub-micron level. The separated dies are obtained by wafer splitting after heat treatment and have cleavage roughness at a nano-meter level. The process method comprises the steps of: placing a wafer into an ion implanter; implanting gaseous ions into the split lines of said wafer with assistance of a mask; performing heat treatment of said wafer that is to split at the split lines; and completing die separation.

대표청구항 ▼

1. A method of separating a wafer into a plurality of dies, comprising the steps of:a) providing a wafer having opposite surfaces bounding a thickness of the wafer; b) placing the wafer in an ion implanter; c) implanting gaseous ions in the wafer between the opposite surfaces such that the ions are

1. A method of separating a wafer into a plurality of dies, comprising the steps of:a) providing a wafer having opposite surfaces bounding a thickness of the wafer; b) placing the wafer in an ion implanter; c) implanting gaseous ions in the wafer between the opposite surfaces such that the ions are arranged in a network pattern of intersecting lines forming separation lines for the plurality of dies wherein the gaseous ions do not chemically react with the wafer; and, d) heat treating the wafer to cause the wafer to split through the thickness along the network of intersecting lines thereby forming a plurality of dies.