초록 ▼

An improved dry plasma cleaning process for the removal of native oxides, or other oxide films or growth residue, from openings formed in an insulating layer provided over a semiconductor substrate, without damaging the substrate or significantly affecting the critical dimension of the opening is di

An improved dry plasma cleaning process for the removal of native oxides, or other oxide films or growth residue, from openings formed in an insulating layer provided over a semiconductor substrate, without damaging the substrate or significantly affecting the critical dimension of the opening is disclosed. A mixture of nitrogen trifluoride (NF3), ammonia (NH3) and oxygen (O2) is first injected upstream into a microwave plasma source and is exited, and then the plasma is flowed downstream from the plasma source into a reaction chamber containing the substrate.

대표청구항 ▼

1. A method for plasma etching a semiconductor substrate, comprising:introducing a gaseous mixture containing NH3, NF3 and O2 into a plasma source chamber, said plasma source chamber being situated upstream of a plasma chamber containing a semiconductor substrate; generating a plasma of said gaseous

1. A method for plasma etching a semiconductor substrate, comprising:introducing a gaseous mixture containing NH3, NF3 and O2 into a plasma source chamber, said plasma source chamber being situated upstream of a plasma chamber containing a semiconductor substrate; generating a plasma of said gaseous mixture in said plasma source chamber; flowing said plasma downstream of said plasma source chamber, and into said plasma chamber; and contacting said substrate with said plasma.