초록 ▼

An integrated system for producing high purity silicon dioxide comprising: a) a source of an oxygen-containing feed gas containing at least one impurity, b) an oxygen transport membrane cell containing an oxygen-selective transport membrane that has a cathode side and an opposing anode side, the mem

An integrated system for producing high purity silicon dioxide comprising: a) a source of an oxygen-containing feed gas containing at least one impurity, b) an oxygen transport membrane cell containing an oxygen-selective transport membrane that has a cathode side and an opposing anode side, the membrane being at an elevated temperature effective for separation of oxygen in the feed gas from the impurity by transporting oxygen ions from the oxygen-containing feed gas through the membrane to the anode to form a purified oxygen permeate on the anodeside, while retaining an essentially oxygen-depleted, impurity-containing retentate on the cathode side, c) a passageway from the source (a) to the cathode side of the membrane cell, d) a silicon source, and e) a silicon oxidation furnace, in communication with the anode side of the membrane cell, for reaction of the purified oxygen permeate with silicon from the silicon source, at an elevated reaction temperature effective for the reaction, in order to produce the high purity silicon dioxide.

대표청구항 ▼

1. An integrated system for producing high purity silicon dioxide comprising:a) a source of an oxygen-containing feed gas containing at least one impurity, b) an oxygen transport membrane cell containing an oxygen-selective transport membrane that has a cathode side and an opposing anode side, said

1. An integrated system for producing high purity silicon dioxide comprising:a) a source of an oxygen-containing feed gas containing at least one impurity, b) an oxygen transport membrane cell containing an oxygen-selective transport membrane that has a cathode side and an opposing anode side, said membrane being at an elevated temperature effective for separation of oxygen in said feed gas from said impurity by transporting oxygen ions from said oxygen-containing feed gas through said membrane to said anode to form a purified oxygen permeate on said anode side, while retaining an oxygen-depleted, impurity-containing retentate on said cathode side, c) a passageway from said source (a) to the cathode side of said membrane cell, d) silicon wafers, and e) a silicon oxidation furnace, in communication with said anode side of said membrane cell, for reaction of said purified oxygen permeate with silicon from said silicon wafers, at an elevated reaction temperature effective for said reaction, in order to produce said high purity silicon dioxide.