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Composition for film formation and material for insulating film formation 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C09D-183/04
  • C08G-077/04
출원번호 US-0585275 (2000-06-02)
우선권정보 JP-0158674 (1999-06-04); JP-0352862 (1999-12-13)
발명자 / 주소
  • Michinori Nishikawa JP
  • Kinji Yamada JP
  • Mayumi Kakuta JP
  • Yasutake Inoue JP
  • Masahiko Ebisawa JP
  • Satoko Hakamatsuka JP
  • Kentarou Tamaki JP
출원인 / 주소
  • JSR Corporation JP
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 21  인용 특허 : 7

초록

A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for i

대표청구항

1. A composition for film formation which comprises:(A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the following formula (1): R1aSi(OR2)4-a (1) wherein R1 represents hydro

이 특허에 인용된 특허 (7)

  1. Wallace Stephen ; Drage James ; Ramos Teresa ; Smith Douglas M., Alcohol based precursors for producing nanoporous silica thin films.
  2. Deatcher John H. (Lake Peekskill NY) Burkhardt Eric W. (Brewster NY), Blend of solvent and photocurable arylsiloxane materials.
  3. Nakano Tadashi,JPX ; Shimura Makoto,JPX ; Ohta Tomohiro,JPX, Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution.
  4. Kashiwagi Eiichi (Kawasaki JPX) Nakayama Muneo (Tokyo JPX) Hashimoto Akira (Yokohama JPX) Nishimura Toshihiro (Kawasaki JPX), Coating solution for forming a silica-based coating film.
  5. Iida Hiroyuki,JPX ; Endo Hiroki,JPX ; Kobari Hideya,JPX ; Hagiwara Yoshio,JPX ; Nakayama Toshimasa,JPX, Coating solution for forming silica coating and method of forming silica coating.
  6. Tanitsu Katsuya (Kanagawa-ken JPX) Kawakami Atsushi (Tokyo-to JPX) Tanaka Hatsuyuki (Kanagawa-ken JPX) Nakayama Toshimasa (Kanagawa-ken JPX), Method for forming a protective coating film on electronic parts and devices.
  7. Chu Tzong-Jeng (Tainan TWX) Chu Neng-Hui (Kaohsiung Hsien TWX) Kuo-Chu Huang (Kaohsiung TWX) Lee Chin Y. (Taipei TWX), Propylene glycol monomethyl ether butyrates and isomers, and the process for the preparation thereof.

이 특허를 인용한 특허 (21)

  1. Weigel,Scott Jeffrey; Vincent,Jean Louise; Coulter,Sarah Kathryn; MacDougall,James Edward, Aerosol misted deposition of low dielectric organosilicate films.
  2. Karkkainen, Ari, Carbosilane polymer compositions for anti-reflective coatings.
  3. Kärkkäinen, Ari, Carbosilane polymer compositions for anti-reflective coatings.
  4. Oike,Shunsuke; Kohmura,Kazuo; Murakami,Masami; Kubota,Takeshi, Coating liquid for forming porous silica.
  5. Hamada,Yoshitaka; Yagihashi,Fujio; Nakagawa,Hideo; Sasago,Masaru, Composition for forming a porous film prepared by hydrolysis and condensation of an alkoxysilane using a trialkylmethylammonium hydroxide catalyst.
  6. Yagihashi,Fujio; Hamada,Yoshitaka; Nakagawa,Hideo; Sasago,Masaru, Composition for forming porous film, porous film and method for forming the same, interlevel insulator film.
  7. Ogihara,Tsutomu; Yagihashi,Fujio; Hamada,Yoshitaka; Asano,Takeshi; Iwabuchi,Motoaki; Nakagawa,Hideo; Sasago,Masaru, Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device.
  8. Hamada,Yoshitaka; Yagihashi,Fujio; Nakagawa,Hideo; Sasago,Masaru, Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device.
  9. Iwabuchi,Motoaki; Yagihashi,Fujio; Hamada,Yoshitaka; Asano,Takeshi; Nakagawa,Hideo; Sasago,Masaru, Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device.
  10. Iwabuchi,Motoaki; Yagihashi,Fujio; Hamada,Yoshitaka; Nakagawa,Hideo; Sasago,Masaru, Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device.
  11. Ogihara,Tsutomu; Yagihashi,Fujio; Hamada,Yoshitaka; Asano,Takeshi; Iwabuchi,Motoaki; Nakagawa,Hideo; Sasago,Masaru, Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device.
  12. Ogihara,Tsutomu; Yagihashi,Fujio; Nakagawa,Hideo; Sasago,Masaru, Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device.
  13. Peterson,Brian Keith; Kirner,John Francis; Weigel,Scott Jeffrey; MacDougall,James Edward; Deis, legal representative,Lisa; Braymer,Thomas Albert; Campbell,Keith Douglas; Devenney,Martin; Ramberg,C. Eric; Chondroudis,Konstantinos; Cendak,Keith; Deis, deceased,Thomas Alan, Compositions for preparing low dielectric materials.
  14. Peterson,Brian Keith; Kirner,John Francis; Weigel,Scott Jeffrey; MacDougall,James Edward; Deis,Lisa; Braymer,Thomas Albert; Campbell,Keith Douglas; Devenney,Martin; Ramberg,C. Eric; Chondroudis,Konst, Compositions for preparing low dielectric materials.
  15. Peterson,Brian Keith; Kirner,John Francis; Weigel,Scott Jeffrey; MacDougall,James Edward; Deis,Lisa; Braymer,Thomas Albert; Campbell,Keith Douglas; Devenney,Martin; Ramberg,C. Eric; Chondroudis,Konstantinos; Cendak,Keith, Compositions for preparing low dielectric materials.
  16. Hayashi, Masayuki; Kobayashi, Hideki, High energy radiation-curable composition and resin molding.
  17. Corey L. Larsen, Method and apparatus for PCB array with compensated signal propagation.
  18. Larsen, Corey L., Method and apparatus for PCB array with compensated signal propagation.
  19. Yang, Tahorng, Method for forming low dielectric constant insulating layer with foamed structure.
  20. Ko,Min Jin; Moon,Myung Sun; Shin,Dong Seok; Kang,Jung Won; Nam,Hye Yeong, Process for preparing organic silicate polymer.
  21. Ng, Howard C., Silicon-containing polytrimethylene homo-for copolyether composition.
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