초록 ▼

A method for reducing defects in the profiles of chemically amplified photoresists used in deep ultraviolet (DUV) and laser lithography. Chemically amplified resists are typically highly sensitive to nitrogen-bearing surface contaminants, and photoresist layers formed on contaminated surfaces exhibi

A method for reducing defects in the profiles of chemically amplified photoresists used in deep ultraviolet (DUV) and laser lithography. Chemically amplified resists are typically highly sensitive to nitrogen-bearing surface contaminants, and photoresist layers formed on contaminated surfaces exhibit profile defects such as resist footing and T-topping. These defects are reduced by pretreating the surface of a semiconductor device or other structure with a cleansing etchant prior to the formation of the photoresist layer. The cleansing etchant is a solution of sulfuric acid and an oxidizing agent known as "piranha."

대표청구항 ▼

1. A method of forming a patterned photoresist layer on a semiconductor wafer comprising the steps of:providing a semiconductor wafer having a silicon substrate and a first layer formed over said substrate; forming an anti-reflective coating over said first layer; exposing said anti-reflective coati

1. A method of forming a patterned photoresist layer on a semiconductor wafer comprising the steps of:providing a semiconductor wafer having a silicon substrate and a first layer formed over said substrate; forming an anti-reflective coating over said first layer; exposing said anti-reflective coating to a cleansing etchant and then forming a photoresist layer in contact with said anti-reflective coating; and patterning and developing said photoresist layer to form a patterned photoresist layer with a vertical profile.