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A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide polymer as an inter-metal dielectric thus enabling

A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.

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1. A method for forming a top metallization system for high performance integrated circuits, comprising:forming an integrated circuit containing a plurality of devices formed in and on a semiconductor substrate, with an overlaying interconnecting metallization structure connected to said devices and

1. A method for forming a top metallization system for high performance integrated circuits, comprising:forming an integrated circuit containing a plurality of devices formed in and on a semiconductor substrate, with an overlaying interconnecting metallization structure connected to said devices and containing a plurality of first metal lines in one or more layers; depositing a passivation layer over said interconnecting metallization structure; depositing an insulating, separating layer of polymer over said passivation layer that is substantially thicker than said passivation layer; forming openings through said polymer insulating, separating layer and said passivation layer to expose upper metal portions of said overlaying interconnecting metallization structure; depositing metal contacts in said openings; and forming said top metallization system connected to said overlaying interconnecting metallization structure, wherein said top metallization system contains a plurality of top metal lines, in one or more layers, each of said top metal lines having a width substantially greater than said first metal lines.