초록 ▼

A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a

A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a substrate to be processed. The gas ejection head has at least two gas passageways for individually introducing the two gases, and at least two temperature control devices for individually controlling temperatures of the gases flowing through the gas passageways.

대표청구항 ▼

1. An apparatus for processing a substrate, comprising:a gas ejection head to individually receive at least two gases including a material gas, and eject the at least two gases toward a substrate to be processed, wherein said gas ejection head includes (i) at least two gas passageways through which

1. An apparatus for processing a substrate, comprising:a gas ejection head to individually receive at least two gases including a material gas, and eject the at least two gases toward a substrate to be processed, wherein said gas ejection head includes (i) at least two gas passageways through which the at least two gases are to individually flow, and (ii) at least two temperature control devices to individually control or maintain temperatures of the at least two gases as the at least two gases individually flow through said at least two gas passageways.