초록 ▼

A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), ethane (C2H6), butane (C3H8), propane (C4H10), etc. Suitabl

A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), ethane (C2H6), butane (C3H8), propane (C4H10), etc. Suitable silicon-containing gases include silanes such as monosilane (SiH4). The method generally comprises providing a suitable gaseous mixture to the chamber, generating a plasma from the gaseous mixture, and depositing a film onto the substrate using the plasma. In a preferred embodiment, the film is deposited in a high-density plasma chemical vapor deposition (HDP-CVD) system. The gaseous mixture typically includes a silicon containing gas, such as an alkane, and a hydrocarbon containing gas, such as a silane. Embodiments of the method of the present invention can integrated stack structures having overall dielectric constant of about 4.0 or less. Such a structure may include a barrier layer having a dielectric constant of 4.5 or less.

대표청구항 ▼

1. A method for depositing a barrier layer over a substrate disposed in a process chamber, the method comprising:(a) flowing a gaseous mixture comprising a silicon containing gas, and a hydrocarbon containing gas to the chamber, wherein the gaseous mixture has a carbon:silicon ratio less than 8:1 an

1. A method for depositing a barrier layer over a substrate disposed in a process chamber, the method comprising:(a) flowing a gaseous mixture comprising a silicon containing gas, and a hydrocarbon containing gas to the chamber, wherein the gaseous mixture has a carbon:silicon ratio less than 8:1 and greater than 1:1; (b) generating a plasma from said gaseous mixture; and (c) depositing the barrier layer over the substrate with a dielectric layer to form an intermetal dielectric layer in a damascene structure, wherein the barrier layer includes silicon (Si), carbon (C), and hydrogen (H), and said hydrogen is incorporated into the barrier layer in a concentration of about 50 atomic percent or less.