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Copper interconnection structure incorporating a metal seed layer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
출원번호 US-0714504 (2000-11-16)
발명자 / 주소
  • Daniel Charles Edelstein
  • James McKell Edwin Harper
  • Chao-Kun Hu
  • Andrew H. Simon
  • Cyprian Emeka Uzoh
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Robert M. Trepp
인용정보 피인용 횟수 : 45  인용 특허 : 18

초록

The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper c

대표청구항

1. A method for forming an interconnection structure for providing electrical connection to an electronic device comprising the steps of:depositing a copper alloy seed layer on an electronic device, and forming a copper conductor body on said copper alloy seed layer intimately bonding to said layer

이 특허에 인용된 특허 (18)

  1. Farooq Mukta S. (Hopewell Junction NY) Kaja Suryanarayana (Hopewell Junction NY) Perfecto Eric D. (Poughkeepsie NY) White George E. (Hoffman Estates IL), Capped copper electrical interconnects.
  2. Edelstein Daniel Charles ; Harper James McKell Edwin ; Hu Chao-Kun ; Simon Andrew H. ; Uzoh Cyprian Emeka, Copper interconnection structure incorporating a metal seed layer.
  3. Kato Masanori (Tokyo JPX), High-conductivity copper alloys with excellent workability and heat resistance.
  4. Crank Sue E. (Coppell TX), Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer.
  5. Lee Chwan-Ying,TWX ; Huang Tzuen-Hsi,TWX, Integrated circuit inductor structure formed employing copper containing conductor winding layer clad with nickel contai.
  6. Huang Chih-Kung,TWX ; Lai Wei-Jen,TWX, Leadframe for integrated circuit package.
  7. Nguyen Tue ; Hsu Sheng Teng, Low resistance contact between integrated circuit metal levels and method for same.
  8. Tao Jiang ; Fang Peng, Method for fabricating a metallization stack structure to improve electromigration resistance and keep low resistivity.
  9. Farooq Mukta S. (Hopewell Junction NY) Kaja Suryanarayana (Hopewell Junction NY) Perfecto Eric D. (Poughkeepsie NY) White George E. (Hoffman Estates IL), Method for forming capped copper electrical interconnects.
  10. Ho Yu Q. (Kanata CAX) Jolly Gurvinder (Orleans CAX) Emesh Ismail T. (Cumberland CAX), Method for forming interconnect structures for integrated circuits.
  11. Nogami Takeshi ; Dubin Valery ; Cheung Robin, Method of electroplating a copper or copper alloy interconnect.
  12. Pan Ju-Don T. (Austin TX), Method of making an electrical multilayer interconnect.
  13. Andricacos Panayotis Constantinou ; Deligianni Hariklia ; Harper James McKell Edwin ; Hu Chao-Kun ; Pearson Dale Jonathan ; Reynolds Scott Kevin ; Tu King-Ning ; Uzoh Cyprian Emeka, Method of making copper alloys for chip and package interconnections.
  14. Kwon Chul-soon,KRX, Methods of fabricating copper interconnects for integrated circuits.
  15. Kawai Michifumi,JPX ; Satoh Ryohei,JPX ; Yamada Osamu,JPX ; Matsuda Eiji,JPX ; Ishino Masakazu,JPX ; Inoue Takashi,JPX ; Sotokawa Hideo,JPX ; Kyoui Masayuki,JPX, Multilayer substrates methods for manufacturing multilayer substrates and electronic devices.
  16. Ting Chiu ; Dubin Valery, Plated copper interconnect structure.
  17. Zhang Jiming ; Denning Dean J., Process for forming a semiconductor device.
  18. Maniar Papu D. (Austin TX) Moazzami Reza (Austin TX) Mogab C. Joseph (Austin TX), Semiconductor device having a reducing/oxidizing conductive material.

이 특허를 인용한 특허 (45)

  1. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Apparatus for integration of barrier layer and seed layer.
  2. Bao, Junjing; Bonilla, Griselda; Chanda, Kaushik; Choi, Samuel S.; Filippi, Ronald G.; Grunow, Stephan; Lustig, Naftali E.; Moy, Dan; Simon, Andrew H., Back-end electrically programmable fuse.
  3. Bao, Junjing; Bonilla, Griselda; Chanda, Kaushik; Choi, Samuel S.; Filippi, Ronald; Grunow, Stephan; Lustig, Naftali E.; Moy, Dan; Simon, Andrew H., Back-end electrically programmable fuse.
  4. Edelstein, Daniel C.; Nogami, Takeshi; Shobha, Hosadurga K., Barrier layer formation for metal interconnects through enhanced impurity diffusion.
  5. Edelstein, Daniel C.; Cooney, III, Edward C.; Fitzsimmons, John A.; Gambino, Jeffrey P.; Stamper, Anthony K., Copper alloy via bottom liner.
  6. Edelstein,Daniel C.; Cooney, III,Edward C.; Fitzsimmons,John A.; Gambino,Jeffrey P.; Stamper,Anthony K., Copper alloy via bottom liner.
  7. Lane,Michael W.; Chiras,Stefanie R.; Spooner,Terry A.; Rosenberg,Robert; Edelstein,Daniel C., Copper conductor.
  8. Mountsier, Thomas W.; Shaviv, Roey; Mayer, Steven T.; Powell, Ronald A., Diffusion barrier layers.
  9. Lin, Chun-Nan; Tu, Kuo-Yuan; Wu, Shu-Feng; Tsai, Wen-Ching, Display panel structure and manufacture method thereof.
  10. Dyer, Thomas W.; Edelstein, Daniel C.; Ko, Tze-man; Simon, Andrew H.; Tseng, Wei-tsu, Doping of copper wiring structures in back end of line processing.
  11. Yang, Chih-Chao; Edelstein, Daniel C.; Nogami, Takeshi, Formation of alloy liner by reaction of diffusion barrier and seed layer for interconnect application.
  12. Yang, Chih-Chao; Edelstein, Daniel C.; Nogami, Takeshi, Formation of alloy liner by reaction of diffusion barrier and seed layer for interconnect application.
  13. Faust, Richard A.; Jiang, Qing-Tang; Lu, Jiong-Ping, In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability.
  14. Nag, Joyeeta; Ray, Shishir K.; Simon, Andrew H.; Gluschenkov, Oleg; Krishnan, Siddarth A.; Chudzik, Michael P., Integrated circuit having improved electromigration performance and method of forming same.
  15. Wang, Pin-Chin Connie; Avanzino, Steven C., Integrated circuit with low solubility metal-conductor interconnect cap.
  16. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Integration of barrier layer and seed layer.
  17. Simka, Harsono S.; Zierath, Daniel J.; Haverty, Michael G.; Shankar, Sadasivan, Liner layers for metal interconnects.
  18. Lane,Michael; Chiras,Stefanie R.; Spooner,Terry A.; Rosenberg,Robert; Edelstein,Daniel C., Metal capped copper interconnect.
  19. Lopatin, Sergey D.; Besser, Paul R.; Buynoski, Matthew S.; Wang, Pin-Chin Connie, Method of forming an adhesion layer with an element reactive with a barrier layer.
  20. Lopatin, Sergey D.; Besser, Paul R.; Buynoski, Matthew S., Method of implantation after copper seed deposition.
  21. Besser, Paul R.; Buynoski, Matthew S.; Lopatin, Sergey D., Method of implanting copper barrier material to improve electrical performance.
  22. Besser, Paul R.; Buynoski, Matthew S.; Lopatin, Sergey D.; Myers, Alline F.; Wang, Phin-Chin Connie, Method of inserting alloy elements to reduce copper diffusion and bulk diffusion.
  23. Lopatin,Sergey D.; Besser,Paul R.; Myers,Alline F.; Romero,Jeremias D.; Tran,Minh Q.; You,Lu; Wang,Pin Chin Connie, Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition.
  24. Lopatin, Sergey D.; Besser, Paul R.; Wang, Pin-Chin Connie, Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect.
  25. Kim, Hoon; Lee, Wei Ti; Yu, Sang Ho; Ganguli, Seshadri; Ha, Hyoung-Chan; Lee, Sang Hyeob, Methods for forming barrier/seed layers for copper interconnect structures.
  26. Yoon, Hyungsuk Alexander; Redecker, Fritz, Methods of fabricating electronic devices using direct copper plating.
  27. Bruley,John; Carruthers,Roy A.; Gignac,Lynne Marie; Hu,Chao Kun; Liniger,Eric Gerhard; Malhotra,Sandra Guy; Rossnagel,Stephen M., On-chip Cu interconnection using 1 to 5 nm thick metal cap.
  28. Wai,Chien M.; Ohde,Hiroyuki; Kramer,Steve, Semiconductor constructions.
  29. Wai,Chien M.; Ohde,Hiroyuki; Kramer,Steve, Semiconductor constructions comprising a layer of metal over a substrate.
  30. Jang, Sung Ho, Semiconductor device and method of forming metal interconnection layer thereof.
  31. Amishiro, Hiroyuki; Igarashi, Motoshige, Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing method.
  32. Amishiro, Hiroyuki; Igarashi, Motoshige, Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing method.
  33. Ueno, Kazuyoshi, Semiconductor device with improved stress migration resistance and manufacturing process therefor.
  34. Iwasaki, Tomio; Miura, Hideo; Asano, Isamu, Semiconductor device with multilayer conductive structure formed on a semiconductor substrate.
  35. Iwasaki,Tomio; Miura,Hideo; Asano,Isamu, Semiconductor device with multilayer conductive structure formed on a semiconductor substrate.
  36. Kuzuhara, Takeshi; Komura, Atsushi; Katada, Mitsutaka; Naruse, Takayoshi, Semiconductor device, wiring of semiconductor device, and method of forming wiring.
  37. Cabral, Jr., Cyril; Dubois, Geraud J. M.; Edelstein, Daniel C.; Nogami, Takeshi; Sanders, Daniel P., Semiconductor interconnect structure having enhanced performance and reliability.
  38. Cabral, Jr., Cyril; Dubois, Geraud Jean-Michel; Edelstein, Daniel C.; Nogami, Takeshi; Sanders, Daniel P., Semiconductor interconnect structure having enhanced performance and reliability.
  39. Edelstein, Daniel C; Nogami, Takeshi, Semiconductor interconnect structure with multi-layered seed layer providing enhanced reliability and minimizing electromigration.
  40. Roberds, Brian; Barlage, Doulgas W., Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering.
  41. Roberds, Brian; Barlage, Doulgas W., Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering.
  42. Baik, Chan Wook; Kim, Jong Seok; Kim, Sun Il; Son, Young Mok, Substrate structure and method of forming the same.
  43. Mori, Satoru; Komiyama, Shozo, Thin-film transistor and intermediate of thin-film transistor.
  44. Mori, Satoru; Komiyama, Shozo, Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films.
  45. Achuthan, Krishnashree; Lopatin, Sergey, Tin palladium activation with maximized nuclei density and uniformity on barrier material in interconnect structure.
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