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Endpoint detection in the fabrication of electronic devices

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0286493 (1999-04-05)
발명자 / 주소
  • Michael N. Grimbergen
  • Thorsten B. Lill
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Janah & Associates
인용정보 피인용 횟수 : 37  인용 특허 : 29

초록

A chamber 28 comprises a radiation source 58 capable of emitting radiation having a wavelength that is substantially absorbed in a predetermined pathlength in a thickness of a layer 22 on a substrate, and a radiation detector 62 adapted to detect the radiation. The radiation is substantially absorbe

대표청구항

1. A chamber for processing a substrate, the chamber comprising:(a) a radiation source capable of emitting radiation having a wavelength that is substantially absorbed in a pathlength in a thickness of a layer on the substrate; and (b) a radiation detector adapted to detect the radiation.

이 특허에 인용된 특허 (29)

  1. Flinchbaugh Bruce E. (Dallas TX) Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Reese Jon (Waxahachie TX), Apparatus and method for production process diagnosis using dynamic time warping.
  2. Sawin Herbert H. (Arlington MA) Conner William T. (Somerville MA) Dalton Timothy J. (N. Reading MA) Sachs Emanuel M. (Somerville MA), Apparatus and method for real-time measurement of thin film layer thickness and changes thereof.
  3. Coronel Philippe (Massy FRX) Canteloup Jean (Montlhery FRX), Apparatus for monitoring the dry etching of a dielectric film to a given thickness in an integrated circuit.
  4. Yachi Masaharu (Nagano JPX), Dry etching apparatus.
  5. Christol James T. (Cupertino CA) Burchard John S. (Santa Clara CA), End point detection in etching wafers and the like.
  6. Sternheim Marek A. (Livermore CA) van Gelder Willem (Lehighton PA), Interferometric method and apparatus for measuring etch rate and fabricating devices.
  7. Habegger Millard A. (Boulder CO), Interferometric process and apparatus for the measurement of the etch rate of opaque surfaces.
  8. Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Kaczorowski Edward M. (Santa Clara CA), Laser interferometer system and method for monitoring and controlling IC processing.
  9. Cheng David (San Jose CA) Hartlage Robert P. (Santa Clara CA) Zhang Wesley W. (Burlingame CA), Laser interferometer system for monitoring and controlling IC processing.
  10. Aspnes David Erik (Berkeley Heights NJ), Measurement of thin films by polarized light.
  11. Ye Yan ; Ma Diana Xiaobing ; Yin Gerald Zheyao ; Prasad Keshav ; Siegel Mark ; Mak Steve S. Y. ; Martinez Paul ; Papanu James S. ; Lu Danny Chien, Method and apparatus for cleaning by-products from plasma chamber surfaces.
  12. Latos Thomas S. (Carpentersville IL), Method and apparatus for controlling plasma etching.
  13. Ebbing Peter (Los Altos CA) Birang Manoocher (Santa Clara CA), Method and apparatus for endpoint detection in a semiconductor wafer etching system.
  14. Ebbing Peter (Los Altos CA) Birang Manoocher (Santa Clara CA), Method and apparatus for endpoint detection in a semiconductor wafer etching system.
  15. Maung Sonny (Plano TX) Butler Stephanie W. (Plano TX) Henck Steven A. (Plano TX), Method and apparatus for process endpoint prediction based on actual thickness measurements.
  16. Bobel Friedrich (Uttenreuth DEX) Bauer Norbert (Erlangen DEX), Method and arrangement for determining the layer-thickness and the substrate temperature during coating.
  17. Arienzo Maurizio (Chappaqua NY) Harame David L. (Mohegan Lake NY) Oehrlein Gottlieb S. (Yorktown Heights NY), Method for controlling silicon etch depth.
  18. Busta Heinz H. (Park Ridge IL) Lajos Robert E. (Crystal Lake IL) Bhasin Kul B. (Schaumburg IL), Method for end point detection during plasma etching.
  19. Curtis Bernard J. (Gattikon CHX), Method for end point detection in a plasma etching process.
  20. Yu Chorng-Tao (Yorba Linda CA) Isaak Kenneth H. (Tustin CA), Method for film thickness endpoint control.
  21. Litvak Herbert E. (Cupertino CA), Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.
  22. Kleinknecht Hans P. (Bergdietikon CHX) Kane James (Zumikon CHX), Optically monitoring the thickness of a depositing layer.
  23. Schoenborn Philippe (San Jose CA), Plasma etching process control.
  24. Barna Gabriel G. (Richardson TX) Ratliff Charles (Richardson TX), Process and apparatus for detecting aberrations in production process operations.
  25. Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Flinchbaugh Bruce E. (Dallas TX) Gunturi Sarma S. (Richardson TX) Lassiter Thomas W. (Garland TX) Love Robert L. (McKinney TX), Process and apparatus for detecting aberrations in production process operations.
  26. Betz Hans (Berlin DEX) Mader Herman (Unterhaching DEX) Pelka Joachim (Berlin DEX), Process for imaging laserinterferometry and a laserinterferometer for carrying out said process.
  27. Brooks ; Jr. Edward A. (Novato CA) Bithell Roger M. (Novato CA), Process monitor and method thereof.
  28. Booth ; Jr. Robert M. (Wappingers Falls NY) Wasik Chester A. (Poughkeepsie NY), Situ rate and depth monitor for silicon etching.
  29. Hauser Hugo (Palo Alto CA) Monahan Kevin M. (Mountain View CA), System for detecting a film layer on an object.

이 특허를 인용한 특허 (37)

  1. Kamp, Tom A.; Miller, Alan J.; Venugopal, Vijayakumar C., Apparatus and method for controlling etch depth.
  2. McMillen, James A.; Grund, Evan, Apparatus and method for enabling high resolution film thickness and thickness-uniformity measurements.
  3. Pierrat, Christophe, Blank for alternating PSM photomask with charge dissipation layer.
  4. Lian, Lei; Davis, Matthew F, Determining endpoint in a substrate process.
  5. Lian, Lei; Davis, Matthew Fenton, Determining endpoint in a substrate process.
  6. Lian, Lei; Davis, Matthew Fenton, Determining endpoint in a substrate process.
  7. Iijima, Etsuo; Yamada, Norikazu, Dry-etching method.
  8. Iijima,Etsuo; Yamada,Norikazu, Dry-etching method.
  9. Grimbergen, Michael, Endpoint detection for photomask etching.
  10. Grimbergen, Michael, Endpoint detection for photomask etching.
  11. Xu, Kun; Carlsson, Ingemar; Liu, Feng Q.; Gage, David Maxwell; Wang, You; Benvegnu, Dominic J.; Swedek, Boguslaw A.; Wang, Yuchun; Fontarensky, Pierre; Tu, Wen-Chiang; Karuppiah, Lakshmanan, Feedback control of polishing using optical detection of clearance.
  12. Xu, Kun; Liu, Feng; Benvegnu, Dominic J.; Swedek, Boguslaw A.; Wang, Yuchun; Tu, Wen-Chiang; Karuppiah, Laksh, Feedback of layer thickness timing and clearance timing for polishing control.
  13. Xu, Kun; Liu, Feng; Benvegnu, Dominic J.; Swedek, Boguslaw A.; Wang, Yuchun; Tu, Wen-Chiang; Karuppiah, Laksh, GST film thickness monitoring.
  14. Lian, Lei; Davis, Matthew F, Interferometric endpoint determination in a substrate etching process.
  15. Lian,Lei; Davis,Matthew F., Interferometric endpoint determination in a substrate etching process.
  16. Ghyselen, Bruno; Aulnette, C?cile; Osternaud, B?n?dite, Method and apparatus for adjusting the thickness of a thin layer of semiconductor material.
  17. McMillin, Brian K.; Hudson, Eric; Marks, Jeffrey, Method and apparatus for detecting endpoint during plasma etching of thin films.
  18. Yue, Hongyu; Lam, Hieu A., Method and apparatus for determining an etch property using an endpoint signal.
  19. Davis, Matthew Fenton; Yamartino, John M.; Lian, Lei, Method and system for monitoring an etch process.
  20. Sung, Un-Cheol; Choi, Beohm-Rock, Method of depositing and inspecting an organic light emitting display panel.
  21. Izawa, Masaru; Mori, Masahito; Negishi, Nobuyuki; Tachi, Shinichi, Method of manufacturing a semiconductor device and manufacturing system.
  22. Magni, Enrico, Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission.
  23. Magni,Enrico, Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission.
  24. Xu, Kun; Liu, Feng Q; Wang, Yuchun; Ravid, Abraham; Tu, Wen-Chiang, Metrology for GST film thickness and phase.
  25. Sui, Zhifeng; Shan, Hongqing; Johansson, Nils; Noorbakhsh, Hamid; Guan, Yu, Monitoring substrate processing using reflected radiation.
  26. Sui, Zhifeng; Frum, Coriolan; Yuan, Jie; Hsieh, Chang-Lin, Monitoring substrate processing with optical emission and polarized reflected radiation.
  27. Ogasawara, Kosuke; Saito, Susumu; Nozawa, Syuji, Plasma processing apparatus for performing accurate end point detection.
  28. Sakai,Itsuko; Ohiwa,Tokuhisa, Plasma processing method.
  29. Lee, Kyeong-Tae; Choi, Jinhan; Jang, Bi; Deshmukh, Shashank C.; Shen, Meihua; Lill, Thorsten B.; Yu, Jae Bum, Process for etching tungsten silicide overlying polysilicon particularly in a flash memory.
  30. Janos, Alan C.; Sinnot, Anthony; Berry, Ivan; Stewart, Kevin; Mohondro, Robert Douglas, Process for optically erasing charge buildup during fabrication of an integrated circuit.
  31. Krusor, Brent S.; Chua, Christopher L.; Wunderer, Thomas; Johnson, Noble M.; Cheng, Bowen, Removing aluminum nitride sections.
  32. Moghadam,Farhad K.; Cox,Michael S.; Krishnaraj,Padmanabhan; Pham,Thanh N., Sequential gas flow oxide deposition technique.
  33. Naoe, Takuya; Endoh, Hirohiko, Silicon substrate processing method for observing defects in semiconductor devices and defect-detecting method.
  34. Lill, Thorsten B.; Grimbergen, Michael N.; Trevor, Jitske; Jiang, Wei-Nan; Chinn, Jeffrey, Substrate monitoring method and apparatus.
  35. Suzuki,Tomohiro; Koshimizu,Chishio, Temperature/thickness measuring apparatus, temperature/thickness measuring method, temperature/thickness measuring system, control system and control method.
  36. Hu, Xiang; Cong, Hai; Yelehanka, Pradeep; Zhou, Mei Sheng, Thin film etching method and semiconductor device fabrication using same.
  37. Yoshikawa,Toshiyuki; Tsuchiya,Toshio, Wafer processing method.
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