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In a semiconductor device which has capacitors respectively connected to multiple input terminals, and in which the remaining terminals of the capacitors are commonly connected to a sense amplifier, the capacitors and the sense amplifier are formed by utilizing a semiconductor layer on an insulating

In a semiconductor device which has capacitors respectively connected to multiple input terminals, and in which the remaining terminals of the capacitors are commonly connected to a sense amplifier, the capacitors and the sense amplifier are formed by utilizing a semiconductor layer on an insulating surface, whereby high-speed, high-precision processing of signals having a large number of bits supplied from the multiple input terminals is realized by a small circuit scale.

대표청구항 ▼

1. A semiconductor device comprising:a plurality of input terminals capable of inputting signals independently of each other; a capacitor that includes a plurality of capacitor elements each with two opposed electrodes, a first of the two electrodes being electrically connected to one of the plurali

1. A semiconductor device comprising:a plurality of input terminals capable of inputting signals independently of each other; a capacitor that includes a plurality of capacitor elements each with two opposed electrodes, a first of the two electrodes being electrically connected to one of the plurality of input terminals for weighting in an arithmetic operation; and a sense amplifier that includes an input section commonly connected to a second of the two electrodes of the plurality of capacitor elements, wherein said sense amplifier outputs a result of the arithmetic operation, said capacitor is disposed on an insulating surface such that the first electrode is disposed on the insulating surface and the second electrode is disposed on the first electrode to sandwich an insulating layer therebetween, said sense amplifier comprises a field effect transistor that includes a semiconductor film, and said sense amplifier is provided on the insulating surface and is used in performing the arithmetic operation; a switch element connected to at least one of the two opposed electrodes of each of the plurality of capacitor elements, said switch element including a field effect transistor, wherein said field effect transistor includes source and drain regions and a well region of a first conductivity type, the first conductivity type being opposite to a second conductivity type; and around the source and drain regions, a region of the first conductivity type and of an impurity concentration lower than that of the well region.