초록 ▼

A method and apparatus are provided for the electroplating of a substrate such as a semiconductor wafer which provides a uniform electroplated surface and minimizes bum-through of a seed layer used on the substrate to initiate electroplating. The method and apparatus of the invention uses a speciall

A method and apparatus are provided for the electroplating of a substrate such as a semiconductor wafer which provides a uniform electroplated surface and minimizes bum-through of a seed layer used on the substrate to initiate electroplating. The method and apparatus of the invention uses a specially defined multistep electroplating process wherein, in one aspect, a voltage below a predetermined threshold voltage is applied to the anode and cathode for a first time period followed by applying a current to the anode and cathode for a second time period the current producing a voltage below the predetermined threshold voltage. In another aspect of the invention, a current is applied to the anode and cathode substrate which current is preprogrammed to ramp up to a current value from a first current value which current produces a voltage below a predetermined threshold voltage. Electroplated articles including copper electroplated semiconductor wafers made using the apparatus and method of the invention are also provided.

대표청구항 ▼

1. A multistep electroplating process for electroplating a substrate containing a seed layer thereon with copper or other metal comprising the steps of:inserting the substrate having the seed layer thereon to initiate metal plating into an electroplating apparatus comprising a metal plating solution

1. A multistep electroplating process for electroplating a substrate containing a seed layer thereon with copper or other metal comprising the steps of:inserting the substrate having the seed layer thereon to initiate metal plating into an electroplating apparatus comprising a metal plating solution, an anode and multiple cathode electrical perimeter contacts to the seed layer; exposing the seed layer, anode and the perimeter contacts to the metal plating solution; plating onto the seed layer and substrate by applying to the anode and cathode perimeter contacts for a first time period a voltage below a predetermined threshold voltage which was empirically determined to cause burn-through of the seed layer; and continuing the plating onto the plated substrate by applying after the first time period a current to the anode and cathode perimeter contacts for a second time period the current producing a voltage below the predetermined threshold voltage.