초록 ▼

A titanium nitride barrier within an integrated contact structure is formed as multi-layered stack. The multi-layering of the titanium nitride thus provides improved junction integrity since the multi-layer structure exhibits improved mechanical stability when compared to conventional single layer a

A titanium nitride barrier within an integrated contact structure is formed as multi-layered stack. The multi-layering of the titanium nitride thus provides improved junction integrity since the multi-layer structure exhibits improved mechanical stability when compared to conventional single layer arrangements. The multi-layer titanium nitride barrier may be used as either a conventional interconnect metallization or as a nucleation structure within a tungsten plug. The multi-layer structure may be formed to include an overall thickness less than a conventional single layer, yet provide for improved stress accommodation, resulting in eliminating micro-cracks within the titanium nitride (and as a result eliminating the un-wanted diffusion of aluminum or tungsten precursors through the titanium nitride).

대표청구항 ▼

1. A semiconductor device including a titanium nitride barrier structure between a substrate and a contact metallization region, said semiconductor device comprising:a semiconductor substrate; a first dielectric layer formed to cover a predetermined surface region of said substrate; a first titanium

1. A semiconductor device including a titanium nitride barrier structure between a substrate and a contact metallization region, said semiconductor device comprising:a semiconductor substrate; a first dielectric layer formed to cover a predetermined surface region of said substrate; a first titanium adherence layer of a predetermined thickness deposited to cover a predefined area of said first dielectric layer; a multi-layered titanium nitride barrier structure comprising separate, relatively thin layers of titanium nitride deposited to cover said first titanium layer, said multi-layered structure comprising chemically multi-layered titanium nitride wherein the individual titanium nitride layers within said structure alternate in composition with respect to the nitrogen to titanium ratio; and a contact metallization region deposited to cover said multi-layered titanium nitride barrier structure.