$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Programmable sub-surface aggregating metallization structure and method of making same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-013/00
출원번호 US-0555612 (2000-07-27)
국제출원번호 PCT/US98/25830 (1998-12-04)
§371/§102 date 20000727 (20000727)
국제공개번호 WO99/28914 (1999-06-10)
발명자 / 주소
  • Michael N. Kozicki
  • William C. West
출원인 / 주소
  • Arizona Board of Regents
대리인 / 주소
    Snell & Wilmer LLP
인용정보 피인용 횟수 : 277  인용 특허 : 12

초록 ▼

A programmable sub-surface aggregating metallization sructure ("PSAM") includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with

대표청구항 ▼

1. A programmable sub-surface aggregating metallization (PSAM) structure comprising:an ion conductor; a plurality of electrodes disposed on said ion conductor, wherein at least two of said electrodes are configured for growing a metal dendrite from the negative of the two electrodes toward the posit

이 특허에 인용된 특허 (12)

  1. Neale Ronald G. (Indian Harbour Beach FL), Amorphous non-volatile ram.
    상세보기
  2. Sprague David S. (Portola Valley CA) Woo Arthur N. (Cupertino CA), Map reading system for indicating a user\s position on a published map with a global position system receiver and a data.
    상세보기
  3. Loomis Peter Van Wyck (Sunnyvale CA) Farmer Dominic G. (Milpitas CA), Memory cartridge for a handheld electronic video game.
    상세보기
  4. Klersy Patrick ; Pashmakov Boil ; Czubatyj Wolodymyr ; Kostylev Sergey ; Ovshinsky Stanford R., Memory element with energy control mechanism.
    상세보기
  5. Kozicki Michael N. (Phoenix AZ), Personal electronic dosimeter.
    상세보기
  6. Buckley William D. (1035 Kirts Road Troy MI 48084), Process of making a filament-type memory semiconductor device.
    상세보기
  7. Kozicki Michael N. ; West William C., Programmable metallization cell structure and method of making same.
    상세보기
  8. Kozicki Michael N. ; West William C., Programmable metallization cell structure and method of making same.
    상세보기
  9. Ovshinsky Stanford R. (Bloomfield Hills MI), Recording and retrieving information in an amorphous memory material using a catalytic material.
    상세보기
  10. Klersy Patrick J. (Madison Heights MI) Jablonski David C. (Waterford MI) Ovshinsky Stanford R. (Bloomfield Hills MI), Thin-film structure for chalcogenide electrical switching devices and process therefor.
    상세보기
  11. Ovshinsky Stanford R. ; Pashmakov Boil, Universal memory element and method of programming same.
    상세보기
  12. Nakamura Takashi (Kyoto JPX), Variable resistor and neuro device using the variable resistor for weighting.
    상세보기

이 특허를 인용한 특허 (277)

  1. Daley, Jon; Campbell, Kristy A.; Brooks, Joseph F., Access transistor for memory device.
    상세보기
  2. Daley, Jon; Campbell, Kristy A.; Brooks, Joseph F., Access transistor for memory device.
    상세보기
  3. Daley, Jon; Campbell, Kristy A.; Brooks, Joseph F., Access transistor for memory device.
    상세보기
  4. Bulovic, Vladimir; Mandell, Aaron; Perlman, Andrew, Addressable and electrically reversible memory switch.
    상세보기
  5. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
    상세보기
  6. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
    상세보기
  7. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
    상세보기
  8. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
    상세보기
  9. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
    상세보기
  10. Moore, John, Apparatus and method for dual cell common electrode PCRAM memory device.
    상세보기
  11. Wang, Zhigang; Dhaoui, Fethi; McCollum, John; Bellippady, Vidyadhara, Array and control method for flash based FPGA cell.
    상세보기
  12. Campbell,Kristy A., Assemblies displaying differential negative resistance.
    상세보기
  13. Campbell, Kristy A., Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance.
    상세보기
  14. Greene, Jonathan; Hawley, Frank W.; McCollum, John, Back to back resistive random access memory cells.
    상세보기
  15. Greene, Jonathan; Hawley, Frank; McCollum, John, Back to back resistive random access memory cells.
    상세보기
  16. Moore, John T.; Gilton, Terry L., Chalcogenide comprising device.
    상세보기
  17. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Brooks, Joseph F., Chalcogenide glass constant current device, and its method of fabrication and operation.
    상세보기
  18. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Brooks, Joseph F., Chalcogenide glass constant current device, and its method of fabrication and operation.
    상세보기
  19. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Brooks, Joseph F., Chalcogenide glass constant current device, and its method of fabrication and operation.
    상세보기
  20. Campbell,Kristy A., Chalcogenide-based electrokinetic memory element and method of forming the same.
    상세보기
  21. Kamalanathan, Deepak; Echeverry, Juan Pablo Saenz; Gopinath, Venkatesh P., Circuits and methods for placing programmable impedance memory elements in high impedance states.
    상세보기
  22. Hecht, Volker, Circuits and methods for preventing over-programming of ReRAM-based memory cells.
    상세보기
  23. Li, Jiutao; McTeer, Allen; Herdt, Gregory; Doan, Trung T., Co-sputter deposition of metal-doped chalcogenides.
    상세보기
  24. Li,Jiutao; McTeer,Allen; Herdt,Gregory; Doan,Trung T., Co-sputter deposition of metal-doped chalcogenides.
    상세보기
  25. Li,Jiutao; McTeer,Allen; Herdt,Gregory; Doan,Trung T., Co-sputter deposition of metal-doped chalcogenides.
    상세보기
  26. Nejad,Hasan; Seyyedy,Mirmajid, Columnar 1T-N memory cell structure.
    상세보기
  27. Hush, Glen; Baker, Jake, Complementary bit PCRAM sense amplifier and method of operation.
    상세보기
  28. Hush, Glen; Baker, Jake, Complementary bit PCRAM sense amplifier and method of operation.
    상세보기
  29. Hush,Glen; Baker,Jake, Complementary bit resistance memory sensor and method of operation.
    상세보기
  30. Ma, Yi; Gopalan, Chakravarthy; Gallo, Antonio R.; Wang, Janet, Conducting bridge random access memory (CBRAM) device structures.
    상세보기
  31. Campbell, Kristy A., Continuously variable resistor.
    상세보기
  32. Kozicki, Michael N.; Ren, Minghan, Dendritic metal structures, methods for making dendritic metal structures, and devices including them.
    상세보기
  33. Kozicki, Michael N., Dendritic structures and tags.
    상세보기
  34. Kozicki, Michael N., Dendritic structures and tags.
    상세보기
  35. Kozicki, Michael N., Dendritic structures and tags.
    상세보기
  36. Kozicki, Michael N., Dendritic structures and tags.
    상세보기
  37. Mei, Ping; Jackson, Warren, Device having a state dependent upon the state of particles dispersed in a carrier.
    상세보기
  38. Campbell, Kristy A., Differential negative resistance memory.
    상세보기
  39. Campbell,Kristy A., Differential negative resistance memory.
    상세보기
  40. Campbell,Kristy A., Differential negative resistance memory.
    상세보기
  41. Hush, Glen; Duesman, Kevin G.; Casper, Steve, Dual write cycle programmable conductor memory system and method of operation.
    상세보기
  42. Sakamoto, Toshitsugu; Aono, Masakazu; Hasegawa, Tsuyoshi; Nakayama, Tomonobu; Terabe, Kazuya; Kawaura, Hisao; Sugibayashi, Tadahiko, Electric device using solid electrolyte.
    상세보기
  43. Kozicki, Michael, Electrical devices including dendritic metal electrodes.
    상세보기
  44. Bulovic,Vladimir; Mandell,Aaron; Perlman,Andrew, Electrically addressable memory switch.
    상세보기
  45. Moore,John T.; Brooks,Joseph F., Electrode structure for use in an integrated circuit.
    상세보기
  46. Li, Jiutao; McTeer, Allen, Elimination of dendrite formation during metal/chalcogenide glass deposition.
    상세보기
  47. Li, Jiutao; McTeer, Allen, Elimination of dendrite formation during metal/chalcogenide glass deposition.
    상세보기
  48. Liu, Jun, Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication.
    상세보기
  49. Liu, Jun, Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication.
    상세보기
  50. Campbell,Kristy A.; Moore,John T.; Gilton,Terry L., Fabrication of single polarity programmable resistance structure.
    상세보기
  51. Mandell, Aaron; Perlman, Andrew, Floating gate memory device using composite molecular material.
    상세보기
  52. Li, Jiutao; Hampton, Keith; McTeer, Allen, Forming a memory device using sputtering to deposit silver-selenide film.
    상세보기
  53. Greene, Jonathan; Hawley, Frank W.; McCollum, John, Front to back resistive random access memory cells.
    상세보기
  54. Greene, Jonathan; Hawley, Frank W.; McCollum, John, Front to back resistive random access memory cells.
    상세보기
  55. Greene, Jonathan; Hawley, Frank; McCollum, John, Front to back resistive random access memory cells.
    상세보기
  56. Moore, John T.; Gilton, Terry L.; Campbell, Kristy A., Graded GeSeconcentration in PCRAM.
    상세보기
  57. Moore, John T.; Gilton, Terry L.; Campbell, Kristy A., Graded GexSe100-x concentration in PCRAM.
    상세보기
  58. Li, Jiutao; McTeer, Allen, Integrated circuit device and fabrication using metal-doped chalcogenide materials.
    상세보기
  59. Li, Jiutao; McTeer, Allen, Integrated circuit device and fabrication using metal-doped chalcogenide materials.
    상세보기
  60. Li, Jiutao; McTeer, Allen, Integrated circuit device and fabrication using metal-doped chalcogenide materials.
    상세보기
  61. Liaw,Corvin; Willer,Josef, Integrated memory device and method for operating the same.
    상세보기
  62. Perner,Martin, Integrated semiconductor memory.
    상세보기
  63. Campbell, Kristy A.; Li, Jiutao; McTeer, Allen; Moore, John T., Layered resistance variable memory device and method of fabrication.
    상세보기
  64. Campbell, Kristy A.; Li, Jiutao; McTeer, Allen; Moore, John T., Layered resistance variable memory device and method of fabrication.
    상세보기
  65. Campbell,Kristy A.; Li,Jiutao; McTeer,Allen; Moore,John T., Layered resistance variable memory device and method of fabrication.
    상세보기
  66. McCollum, John L.; Hamdy, Esmat Z., Low leakage ReRAM FPGA configuration cell.
    상세보기
  67. Moore,John T.; Gilton,Terry L., Memory architecture and method of manufacture and operation thereof.
    상세보기
  68. Moore,John T.; Gilton,Terry L., Memory architecture and method of manufacture and operation thereof.
    상세보기
  69. Moore,John T.; Gilton,Terry L., Memory architecture and method of manufacture and operation thereof.
    상세보기
  70. Moore,John T.; Gilton,Terry L., Memory architecture and method of manufacture and operation thereof.
    상세보기
  71. Moore,John T.; Gilton,Terry L., Memory architecture containing a high density memory array of semi-volatile or non-volatile memory elements.
    상세보기
  72. Daley,Jon, Memory array for increased bit density.
    상세보기
  73. Daley, Jon, Memory array for increased bit density and method of forming the same.
    상세보기
  74. Li,Li; Li,Jiutao, Memory cell intermediate structure.
    상세보기
  75. Liu, Jun, Memory cells with rectifying device.
    상세보기
  76. Liu, Jun, Memory cells with rectifying device.
    상세보기
  77. Gopinath, Venkatesh P.; Shields, Jeffrey Allan; Ma, Yi; Gopalan, Chakravarthy; Kwon, Ming; Dinh, John, Memory cells with vertically integrated tunnel access device and programmable impedance element.
    상세보기
  78. Krieger, Juri H.; Yudanov, Nikolai, Memory device.
    상세보기
  79. Krieger, Juri H.; Yudanov, Nikolai, Memory device.
    상세보기
  80. Krieger, Juri H.; Yudanov, Nikolai, Memory device.
    상세보기
  81. Krieger, Juri H.; Yudanoy, Nikolai, Memory device.
    상세보기
  82. Takaura, Norikatsu; Terao, Motoyasu; Matsuoka, Hideyuki; Kurotsuchi, Kenzo, Memory device.
    상세보기
  83. Moore, John T.; Campbell, Kristy A., Memory device and methods of controlling resistance variation and resistance profile drift.
    상세보기
  84. R철hr,Thomas, Memory device having an array of resistive memory cells.
    상세보기
  85. Campbell, Kristy A., Memory device incorporating a resistance variable chalcogenide element.
    상세보기
  86. Krieger, Juri H.; Yudanov, N. F., Memory device with a self-assembled polymer film and method of making the same.
    상세보기
  87. Krieger, Juri H.; Yudanov, Nikolai, Memory device with active and passive layers.
    상세보기
  88. Krieger, Juri H.; Yudanov, Nikolai, Memory device with active passive layers.
    상세보기
  89. Campbell,Kristy A., Memory device with switching glass layer.
    상세보기
  90. Moore,John T.; Gilton,Terry L., Memory device, programmable resistance memory cell and memory array.
    상세보기
  91. Moore,John T.; Campbell,Kristy A.; Gilton,Terry L., Memory element and its method of formation.
    상세보기
  92. Yasuda, Shuichiro; Tsushima, Tomohito; Sasaki, Satoshi; Aratani, Katsuhisa, Memory element and memory device.
    상세보기
  93. Yasuda, Shuichiro; Tsushima, Tomohito; Sasaki, Satoshi; Aratani, Katsuhisa, Memory element and memory device.
    상세보기
  94. Aratani, Katsuhisa; Tsushima, Tomohito; Kouchiyama, Akira, Memory element and memory device comprising memory layer positioned between first and second electrodes.
    상세보기
  95. Aratani, Katsuhisa; Tsushima, Tomohito; Kouchiyama, Akira; Mizuguchi, Tetsuya, Memory element and memory device comprising memory layer positioned between first and second electrodes.
    상세보기
  96. Daley, Jon; Brooks, Joseph F., Memory elements having patterned electrodes and method of forming the same.
    상세보기
  97. Daley, Jon; Brooks, Joseph F., Memory elements having patterned electrodes and method of forming the same.
    상세보기
  98. Daley,Jon, Method and apparatus for accessing a memory array.
    상세보기
  99. Ivanov, Milena; Hoenigschmid, Heinz; Dietrich, Stefan, Method and apparatus for an integrated circuit with programmable memory cells, data system.
    상세보기
  100. Campbell,Kristy A., Method and apparatus for providing color changing thin film material.
    상세보기
  101. Campbell,Kristy A., Method and apparatus for resistance variable material cells.
    상세보기
  102. Casper, Stephen L.; Duesman, Kevin; Hush, Glen, Method and apparatus for sensing resistive memory state.
    상세보기
  103. Hush, Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.
    상세보기
  104. Hush, Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.
    상세보기
  105. Hush, Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.
    상세보기
  106. Hush, Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.
    상세보기
  107. Hush,Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.
    상세보기
  108. Li,Li; Li,Jiutao, Method for filling via with metal.
    상세보기
  109. Gilton, Terry L.; Moore, John T., Method for programming a memory cell.
    상세보기
  110. Moore,John T.; Brooks,Joseph F., Method of fabricating an electrode structure for use in an integrated circuit.
    상세보기
  111. Raberg, Wolfgang; Ufert, Klaus-Dieter, Method of fabricating an integrated electronic circuit with programmable resistance cells.
    상세보기
  112. Moore, John, Method of fabricating dual PCRAM cells sharing a common electrode.
    상세보기
  113. Campbell,Kristy A., Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element.
    상세보기
  114. Moore, John T.; Gilton, Terry L., Method of forming a chalcogenide comprising device.
    상세보기
  115. Brooks,Joseph F., Method of forming a chalcogenide material containing device.
    상세보기
  116. Brooks,Joseph F., Method of forming a chalcogenide material containing device.
    상세보기
  117. Campbell,Kristy A.; Gilton,Terry L.; Moore,John T., Method of forming a memory cell.
    상세보기
  118. Campbell, Kristy A., Method of forming a memory device incorporating a resistance variable chalcogenide element.
    상세보기
  119. Campbell, Kristy A., Method of forming a memory device incorporating a resistance variable chalcogenide element.
    상세보기
  120. Campbell, Kristy A., Method of forming a memory device incorporating a resistance-variable chalcogenide element.
    상세보기
  121. Moore, John T.; Gilton, Terry L., Method of forming a non-volatile resistance variable device.
    상세보기
  122. Campbell,Kristy A.; Moore,John T., Method of forming a programmable memory cell and chalcogenide structure.
    상세보기
  123. Moore,John T.; Campbell,Kristy A.; Gilton,Terry L., Method of forming a resistance variable memory element.
    상세보기
  124. Campbell, Kristy A., Method of forming a variable resistance memory device comprising tin selenide.
    상세보기
  125. Gilton, Terry L., Method of forming and storing data in a multiple state memory cell.
    상세보기
  126. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Li, Jiutao, Method of forming chalcogenide comprising devices.
    상세보기
  127. Campbell, Kristy A.; Moore, John T., Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry.
    상세보기
  128. Campbell, Kristy A.; Moore, John T., Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device.
    상세보기
  129. Moore, John T., Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices.
    상세보기
  130. Moore,John T.; Brooks,Joseph F., Method of forming electrode structure for use in an integrated circuit.
    상세보기
  131. Moore, John T., Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry.
    상세보기
  132. Campbell,Kristy A.; Moore,John T., Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry.
    상세보기
  133. Harshfield,Steven T.; Wright,David Q., Method of making a memory cell.
    상세보기
  134. Moore, John T.; Campbell, Kristy A.; Gilton, Terry L., Method of manufacture of a PCRAM memory cell.
    상세보기
  135. Moore,John T.; Campbell,Kristy A.; Gilton,Terry L., Method of manufacture of a PCRAM memory cell.
    상세보기
  136. Moore,John T.; Campbell,Kristy A.; Gilton,Terry L., Method of manufacture of a resistance variable memory cell.
    상세보기
  137. Gilton,Terry L., Method of manufacture of programmable conductor memory.
    상세보기
  138. Gilton, Terry L., Method of manufacture of programmable switching circuits and memory cells employing a glass layer.
    상세보기
  139. Hush,Glen; Baker,Jake, Method of operating a complementary bit resistance memory sensor.
    상세보기
  140. Hush,Glen; Baker,Jake, Method of operating a complementary bit resistance memory sensor and method of operation.
    상세보기
  141. Moore, John T.; Gilton, Terry L.; Campbell, Kristy A., Method of refreshing a PCRAM memory device.
    상세보기
  142. Moore,John T.; Gilton,Terry L.; Campbell,Kristy A., Method of refreshing a PCRAM memory device.
    상세보기
  143. Gilton, Terry L.; Campbell, Kristy A., Method of retaining memory state in a programmable conductor RAM.
    상세보기
  144. Gilton, Terry L.; Campbell, Kristy A., Method of retaining memory state in a programmable conductor RAM.
    상세보기
  145. Campbell, Kristy A.; Moore, John; Gilton, Terry L.; Brooks, Joseph F., Method to alter chalcogenide glass for improved switching characteristics.
    상세보기
  146. Moore, John T.; Campbell, Kristy A.; Gilton, Terry L., Method to control silver concentration in a resistance variable memory element.
    상세보기
  147. Moore, John T.; Gilton, Terry L., Method to manufacture a buried electrode PCRAM cell.
    상세보기
  148. Campbell, Kristy A., Methods and apparatus for resistance variable material cells.
    상세보기
  149. Moore, John T.; Gilton, Terry L.; Campbell, Kristy A., Methods for forming chalcogenide glass-based memory elements.
    상세보기
  150. Moore,John T.; Gilton,Terry L., Methods of forming a semiconductor memory device.
    상세보기
  151. Li,Li; Li,Jiutao, Methods of forming and using memory cell structures.
    상세보기
  152. Campbell,Kristy A., Methods of forming assemblies displaying differential negative resistance.
    상세보기
  153. Daley, Jon, Methods of forming memory arrays for increased bit density.
    상세보기
  154. Giltom, Terry L.; Campbell, Kristy A.; Moore, John T., Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures.
    상세보기
  155. Naveh, Ishai, Methods of making memory devices with programmable impedance elements and vertically formed access devices.
    상세보기
  156. Moore, John T.; Gilton, Terry L., Methods of metal doping a chalcogenide material.
    상세보기
  157. Campbell,Kristy A.; Gilton,Terry L.; Moore,John T.; Brooks,Joseph F., Methods of operating and forming chalcogenide glass constant current devices.
    상세보기
  158. Moore, John T.; Gilton, Terry L.; Campbell, Kristy A., Methods to form a memory cell with metal-rich metal chalcogenide.
    상세보기
  159. Moore,John T.; Gilton,Terry L.; Campbell,Kristy A., Methods to form a memory cell with metal-rich metal chalcogenide.
    상세보기
  160. Kozicki, Michael N, Microelectric programmable device and methods of forming and programming the same.
    상세보기
  161. Kozicki, Michael N., Microelectronic programmable device and methods of forming and programming the same.
    상세보기
  162. Kozicki, Michael N.; Mitkova, Maria, Microelectronic programmable device and methods of forming and programming the same.
    상세보기
  163. Kozicki,Michael N.; Mitkova,Maria, Microelectronic programmable device and methods of forming and programming the same.
    상세보기
  164. Kozicki,Michael N; Mitkova,Maria, Microelectronic programmable device and methods of forming and programming the same.
    상세보기
  165. Krieger, Juri H.; Yudanov, Nikolay F., Molecular memory cell.
    상세보기
  166. Krieger,Juri H; Yudanov,Nicolay F, Molecular memory cell.
    상세보기
  167. Bulovic, Vladimir; Mandell, Aaron; Perlman, Andrew, Molecular memory device.
    상세보기
  168. Philipp, Jan Boris; Happ, Thomas, Multi-level resistive memory cell using different crystallization speeds.
    상세보기
  169. Sunkavalli, Ravi, Multi-port memory devices and methods having programmable impedance elements.
    상세보기
  170. Gilton, Terry L., Multiple data state memory cell.
    상세보기
  171. Gilton,Terry L., Multiple data state memory cell.
    상세보기
  172. Gilton,Terry L., Multiple data state memory cell.
    상세보기
  173. Gilton, Terry L., Non-volatile memory structure.
    상세보기
  174. Gilton, Terry L., Non-volatile memory structure.
    상세보기
  175. Gilton,Terry L., Non-volatile memory structure.
    상세보기
  176. Gilton,Terry L., Non-volatile memory structure.
    상세보기
  177. Moore, John T., Non-volatile resistance variable device.
    상세보기
  178. Campbell,Kristy A.; Moore,John T., Non-volatile resistance variable devices.
    상세보기
  179. Gilton,Terry L., Non-volatile resistance variable devices and method of forming same, analog memory devices and method of forming same, programmable memory cell and method of forming same, and method of structurally .
    상세보기
  180. Jameson, John Ross; Koushan, Foroozan Sarah, Nonvolatile memory elements having conductive structures with semimetals and/or semiconductors.
    상세보기
  181. Kozicki, Michael N., Optimized solid electrolyte for programmable metallization cell devices and structures.
    상세보기
  182. Kingsborough,Richard P.; Sokolik,Igor, Organic thin film Zener diodes.
    상세보기
  183. Campbell, Kristy A., PCRAM device with switching glass layer.
    상세보기
  184. Campbell, Kristy A., PCRAM device with switching glass layer.
    상세보기
  185. Harshfield,Steven T.; Wright,David Q., PCRAM memory cell and method of making same.
    상세보기
  186. Harshfield,Steven T.; Wright,David Q., PCRAM memory cell and method of making same.
    상세보기
  187. Moore, John; Baker, Jake, PCRAM rewrite prevention.
    상세보기
  188. Moore, John; Baker, R. Jacob, PCRAM rewrite prevention.
    상세보기
  189. Campbell, Kristy A., Phase change memory cell and method of formation.
    상세보기
  190. Campbell,Kristy A., Phase change memory cell and method of formation.
    상세보기
  191. Liu, Jun; Violette, Mike, Phase change memory structure with multiple resistance states and methods of programming and sensing same.
    상세보기
  192. Li, Li; Gilton, Terry L.; Ko, Kei-Yu; Moore, John T.; Signorini, Karen, Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes.
    상세보기
  193. Li,Li; Gilton,Terry L.; Ko,Kei Yu; Moore,John T.; Signorini,Karen, Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes.
    상세보기
  194. Hardy, Trevor; Porter, Steve; Williford, Ethan; Ingram, Mark, Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory.
    상세보기
  195. Hardy,Trevor; Porter,Steve; Williford,Ethan; Ingram,Mark, Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory.
    상세보기
  196. Hardy,Trevor; Porter,Steve; Williford,Ethan; Ingram,Mark, Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory.
    상세보기
  197. Klein, Dean A., Power management control and controlling memory refresh operations.
    상세보기
  198. Klein, Dean A., Power management control and controlling memory refresh operations.
    상세보기
  199. Klein, Dean A., Power management control and controlling memory refresh operations.
    상세보기
  200. Daley, Jon, Process for erasing chalcogenide variable resistance memory bits.
    상세보기
  201. Daley,Jon, Process for erasing chalcogenide variable resistance memory bits.
    상세보기
  202. Gilton, Terry L., Programmable conductor memory cell structure and method therefor.
    상세보기
  203. Gilton, Terry L., Programmable conductor memory cell structure and method therefor.
    상세보기
  204. Gilton,Terry L., Programmable conductor memory cell structure and method therefor.
    상세보기
  205. Hush, Glen, Programmable conductor random access memory and a method for writing thereto.
    상세보기
  206. Casper, Stephen L.; Duesman, Kevin; Hush, Glen, Programmable conductor random access memory and method for sensing same.
    상세보기
  207. Gallo, Antonio R.; Koushan, Foroozan Sarah, Programmable impedance memory elements, methods of manufacture, and memory devices containing the same.
    상세보기
  208. Kozicki, Michael N., Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same.
    상세보기
  209. Kozicki,Michael N.; Balakrishnan,Muralikrishnan, Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same.
    상세보기
  210. Tonti, William R.; Berry, Wayne S.; Fifield, John A.; Guthrie, William H.; Kontra, Richard S., Programmable semiconductor device.
    상세보기
  211. Tonti, William R.; Berry, Wayne S.; Fifield, John A.; Guthrie, William H.; Kontra, Richard S., Programmable semiconductor device.
    상세보기
  212. Tonti, William R.; Berry, Wayne S.; Fifield, John A.; Guthrie, William H.; Kontra, Richard S., Programmable semiconductor device.
    상세보기
  213. Kozicki,Michael N.; Mitkova,Maria; Gopalan,Chakravarthy; Balakrishnan,Muralikrish, Programmable structure including an oxide electrolyte and method of forming programmable structure.
    상세보기
  214. Kozicki,Michael N., Programmable structure, an array including the structure, and methods of forming the same.
    상세보기
  215. Kozicki,Michael N., Programmable surface control devices and method of making same.
    상세보기
  216. Perner,Frederick A., Programming of programmable resistive memory devices.
    상세보기
  217. McCollum, John, Push-pull programmable logic device cell.
    상세보기
  218. Gilton, Terry L.; Doan, Trung T., Removable programmable conductor memory card and associated read/write device and method of operation.
    상세보기
  219. Toda, Haruki; Kubo, Koichi, Resistance change memory device.
    상세보기
  220. Toda,Haruki; Kubo,Koichi, Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation.
    상세보기
  221. Toda,Haruki; Kubo,Koichi, Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode.
    상세보기
  222. Toda, Haruki; Kubo, Koichi, Resistance change memory device with a variable resistance element formed of a first and a second composite compound.
    상세보기
  223. Chang, Ting-Chang; Yang, Po-Chun; Lin, Yu-Shih; Chen, Shih-Ching; Jian, Fu-Yen, Resistance random access memory element and method for making the same.
    상세보기
  224. Gilton, Terry L., Resistance variable device.
    상세보기
  225. Moore,John T., Resistance variable device.
    상세보기
  226. Gilton, Terry L., Resistance variable device, analog memory device, and programmable memory cell.
    상세보기
  227. Harshfield, Steven T.; Wright, David Q., Resistance variable memory cells.
    상세보기
  228. Campbell,Kristy A., Resistance variable memory device and method of fabrication.
    상세보기
  229. Campbell,Kristy A., Resistance variable memory device and method of fabrication.
    상세보기
  230. Campbell,Kristy A., Resistance variable memory device and method of fabrication.
    상세보기
  231. Campbell, Kristy A.; Daley, Jon; Brooks, Joseph F., Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication.
    상세보기
  232. Campbell,Kristy A.; Daley,Jon; Brooks,Joseph F., Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication.
    상세보기
  233. Campbell,Kristy A.; Daley,Jon; Brooks,Joseph F., Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication.
    상세보기
  234. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Li, Jiutao, Resistance variable memory devices with passivating material.
    상세보기
  235. Moore, John T.; Campbell, Kristy A.; Gilton, Terry L., Resistance variable memory element and its method of formation.
    상세보기
  236. Campbell,Kristy A.; Daley,Jon; Brooks,Joseph F., Resistance variable memory element with threshold device and method of forming the same.
    상세보기
  237. Campbell,Kristy A.; Daley,Jon; Brooks,Joseph F., Resistance variable memory element with threshold device and method of forming the same.
    상세보기
  238. Campbell,Kristy A., Resistance variable memory elements and methods of formation.
    상세보기
  239. Campbell, Kristy A., Resistance variable memory with temperature tolerant materials.
    상세보기
  240. Campbell, Kristy A., Resistance variable memory with temperature tolerant materials.
    상세보기
  241. Campbell,Kristy A., Resistance variable memory with temperature tolerant materials.
    상세보기
  242. Campbell,Kristy A., Resistance variable memory with temperature tolerant materials.
    상세보기
  243. Campbell, Kristy A.; Moore, John T.; Gilton, Terry L., Resistance variable ‘on ’ memory.
    상세보기
  244. Greene, Jonathan; Hawley, Frank W.; McCollum, John, Resistive RAM devices for programmable logic devices.
    상세보기
  245. Greene, Jonathan; Hawley, Frank; McCollum, John L., Resistive random access memory cells.
    상세보기
  246. Bulovic, Vladimir; Mandell, Aaron; Perlman, Andrew, Reversible field-programmable electric interconnects.
    상세보기
  247. Bulovic,Vladimir; Mandell,Aaron; Perlman,Andrew, Reversible field-programmable electric interconnects.
    상세보기
  248. Moore,John; Baker,R. Jacob, Rewrite prevention in a variable resistance memory.
    상세보기
  249. Yang, Chih-Chao; Cohen, Stephen A; Li, Baozhen, Semiconductor switching device and method of making the same.
    상세보기
  250. Williford,Ethan; Ingram,Mark, Sensing of resistance variable memory devices.
    상세보기
  251. Williford,Ethan; Ingram,Mark, Sensing of resistance variable memory devices.
    상세보기
  252. Li,Jiutao; Hampton,Keith; McTeer,Allen, Silver selenide film stoichiometry and morphology control in sputter deposition.
    상세보기
  253. Li,Jiutao; Hampton,Keith; McTeer,Allen, Silver selenide film stoichiometry and morphology control in sputter deposition.
    상세보기
  254. Campbell, Kristy A.; Moore, John T., Silver-selenide/chalcogenide glass stack for resistance variable memory.
    상세보기
  255. Campbell,Kristy A.; Moore,John T., Silver-selenide/chalcogenide glass stack for resistance variable memory.
    상세보기
  256. Campbell, Kristy A.; Moore, John T., Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof.
    상세보기
  257. Campbell, Kristy A.; Moore, John T.; Gilton, Terry L., Single-polarity programmable resistance-variable memory element.
    상세보기
  258. Liu,Jun; Gilton,Terry L.; Moore,John T., Small electrode for resistance variable devices.
    상세보기
  259. Campbell, Kristy A., SnSe-based limited reprogrammable cell.
    상세보기
  260. Campbell,Kristy A., SnSe-based limited reprogrammable cell.
    상세보기
  261. Gilton, Terry L., Software refreshed memory device and method.
    상세보기
  262. Gilton, Terry L., Software refreshed memory device and method.
    상세보기
  263. Gilton,Terry L., Software refreshed memory device and method.
    상세보기
  264. Gilton,Terry L., Software refreshed memory device and method.
    상세보기
  265. Gopalan, Chakravarthy; Lee, Wei Ti; Ma, Yi; Shields, Jeffrey Allan, Solid electrolyte memory elements with electrode interface for improved performance.
    상세보기
  266. Pinnow, Cay Uwe; Ufert, Klaus Dieter, Solid electrolyte switching element.
    상세보기
  267. Campbell, Kristy A., Stoichiometry for chalcogenide glasses useful for memory devices and method of formation.
    상세보기
  268. Gilton, Terry L., Thin film diode integrated with chalcogenide memory cell.
    상세보기
  269. Gilton,Terry L., Thin film diode integrated with chalcogenide memory cell.
    상세보기
  270. Toda, Haruki, Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array.
    상세보기
  271. Toda, Haruki, Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array.
    상세보기
  272. Toda, Haruki, Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array.
    상세보기
  273. Toda, Haruki, Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array.
    상세보기
  274. Marshall,Joseph R.; Berger,Richard W.; Rodgers,John C., Use of radiation-hardened chalcogenide technology for spaceborne reconfigurable digital processing systems.
    상세보기
  275. Gallo, Antonio R.; Gopalan, Chakravarthy; Ma, Yi, Variable impedance memory device structure and method of manufacture including programmable impedance memory cells and methods of forming the same.
    상세보기
  276. Hush, Glen; Moore, John, Variable resistance memory and method for sensing same.
    상세보기
  277. Ninomiya, Takeki; Mikawa, Takumi; Hayakawa, Yukio, Variable resistance nonvolatile memory element and method for manufacturing the same.
    상세보기

관련 콘텐츠

섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로