초록 ▼

A method of forming a superconducting damascene interconnect structure, and the structure made thereby, the method includes forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; filling the cavity by electrodep

A method of forming a superconducting damascene interconnect structure, and the structure made thereby, the method includes forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; filling the cavity by electrodepositing a Y-Ba-Cu alloy; and annealing in oxygen flow to form a Y-Ba-Cu-O superconductor on the barrier layer. In one embodiment, the superconductor has a formula YBa2Cu3O7-x, wherein x.ltoreq.0.5. In another embodiment, the method includes forming a cavity in an interlevel dielectric; forming a Y-Ba-Cu alloy layer in the cavity; forming a seed layer in the cavity over the Y-Ba-Cu alloy layer; filling the cavity by electrodepositing a Y-Ba-Cu alloy fill; and annealing in oxygen flow to form a Y-Ba-Cu-O superconductor on the dielectric.

대표청구항 ▼

1. A method of forming a superconducting damascene interconnect structure, comprising:forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; filling the cavity by electrodepositing a Y-Ba-Cu alloy; and annealing

1. A method of forming a superconducting damascene interconnect structure, comprising:forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; filling the cavity by electrodepositing a Y-Ba-Cu alloy; and annealing in oxygen flow to form a Y-Ba-Cu-O superconductor on the barrier layer.