초록 ▼

A method of selectively forming either an epi-Si-containing or a silicide layer on portions of a Si-containing substrate wherein a nitrogen-containing layer formed by a low-temperature nitridation process is employed to prevent formation of the epi-Si-containing or silicide layer in predetermined ar

A method of selectively forming either an epi-Si-containing or a silicide layer on portions of a Si-containing substrate wherein a nitrogen-containing layer formed by a low-temperature nitridation process is employed to prevent formation of the epi-Si-containing or silicide layer in predetermined areas of the substrate. The method of the present invention includes the steps of subjecting at least one exposed surface of a Si-containing substrate to a low- temperature nitridation process so as to form a nitrogen-containing layer at or near the at least one exposed surface, wherein other surfaces of the Si-containing substrate are protected by a patterned photoresist; removing the patterned photoresist from the other surfaces of the Si-containing substrate; and forming an epi-Si-containing layer or a silicide layer on the other surfaces of the substrate which do not contain the nitrogen-containing layer. In accordance with the present invention, epi-Si-containing or silicide is not formed in areas containing the nitrogen-containing layer.

대표청구항 ▼

1. A method for selectively forming an epi-Si layer on portions of a Si-containing substrate comprising the steps of:(a) subjecting at least one exposed surface of a Si-containing substrate to a low-temperature nitridation process so as to form a nitrogen-containing layer at or near said at least on

1. A method for selectively forming an epi-Si layer on portions of a Si-containing substrate comprising the steps of:(a) subjecting at least one exposed surface of a Si-containing substrate to a low-temperature nitridation process so as to form a nitrogen-containing layer at or near said at least one exposed surface, wherein other surfaces of said Si-containing substrate are protected by a patterned photoresist; (b) removing said patterned photoresist from said other surfaces of said Si-containing substrate; and (c) forming an epi-Si-containing layer on said other surfaces of said Si-containing substrate which do not contain said nitrogen-containing layer, wherein said epi-Si-containing layer is not formed in areas containing said nitrogen-containing layer.