초록 ▼

In nonvolatile memory capable of erasing, writing and reading data, simplified in structure of memory cells, and enabling high-density information recording, each memory cell is composed of a thin film phase change material having two stable phases, "high-temperature phase" and "low-temperature phas

In nonvolatile memory capable of erasing, writing and reading data, simplified in structure of memory cells, and enabling high-density information recording, each memory cell is composed of a thin film phase change material having two stable phases, "high-temperature phase" and "low-temperature phase" under the room temperature, and an np junction made by a p+-type region and an n+-type region, serially connected to the thin film phase change material. By applying a predetermined voltage to the upper electrode and the lower electrode to have a current flow in a memory cell (MC1l) and change the phase of the thin film phase change material, data is written. By flowing a current in the memory cell (M1l) and thereby reading the current phase of the thin film phase change material, data is read out.

대표청구항 ▼

1. Nonvolatile memory comprising memory cells each made of a thin film phase change material having at least two stable phases and a two-terminal switching element connected to said thin film phase change material,wherein the two-terminal switching element is an np junction, and wherein the thin fil

1. Nonvolatile memory comprising memory cells each made of a thin film phase change material having at least two stable phases and a two-terminal switching element connected to said thin film phase change material,wherein the two-terminal switching element is an np junction, and wherein the thin film phase change material can be changed in phase by applying a reverse bias voltage above the breakdown voltage of the two-terminal switching element.