초록 ▼

A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, growing using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grow

A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, growing using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocation and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.

대표청구항 ▼

1. A method of growing low defect density silicon carbide, the method comprising the steps of:introducing a single crystal silicon carbide seed into a sublimation system; promoting axial crystal growth to form an axial growth region during a first growth stage, wherein at least a portion of a plural

1. A method of growing low defect density silicon carbide, the method comprising the steps of:introducing a single crystal silicon carbide seed into a sublimation system; promoting axial crystal growth to form an axial growth region during a first growth stage, wherein at least a portion of a plurality of dislocation defects and micropipes originating in said single crystal silicon carbide seed propagate into said axial growth region; and promoting lateral crystal growth to form a lateral growth region during said first growth stage, wherein propagation of said plurality of dislocation defects and micropipes from said single crystal silicon carbide seed into said lateral growth region is substantially reduced.