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Apparatus and method for electrochemical processing of a microelectronic workpiece, capable of modifying processing based on metrology 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-021/12
출원번호 US-0612898 (2000-07-08)
발명자 / 주소
  • Thomas L. Ritzdorf
  • Steve L. Eudy
  • Gregory J. Wilson
  • Paul R. McHugh
출원인 / 주소
  • Semitool, Inc.
대리인 / 주소
    Perkins Coie LLP
인용정보 피인용 횟수 : 49  인용 특허 : 30

초록 ▼

An electrochemical processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. An electrochemical deposition unit provides a space to receive said microelectronic workpiece to deposit a subsequent film layer onto a

대표청구항 ▼

1. An electrochemical processing apparatus for processing a microelectronic workpiece, comprising:a metrology unit having a space for receiving a microelectronic workpiece for measuring a condition of a first layer on said microelectronic workpiece and generating a condition signal; a control, signa

이 특허에 인용된 특허 (30)

  1. Chen LinLin, Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece.
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  2. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
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  3. Perlov Ilya ; Gantvarg Evgueni ; Belitsky Victor, Apparatus for storing and moving a cassette.
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  4. Pinson Jay D. ; Shanmugasundram Arulkumar ; Aronson Arnold ; Lum Rodney, Buffer station on CMP system.
    상세보기
  5. Byrne Joshua ; Ravi Tirunelveli S. ; Seamons Martin ; Hanson Eric, Chamber monitoring and adjustment by plasma RF metrology.
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  6. Almogy Gilad,ILX, Cluster tool.
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  7. Almogy Gilad,ILX, Dual resolution combined laser spot scanning and area imaging inspection.
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  8. Swedek Boguslaw ; Wiswesser Andreas Norbert,DEX, Endpoint detection with light beams of different wavelengths.
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  9. Tsai Stan ; Redeker Fred C. ; Wijekoon Kapila, Endpoint monitoring with polishing rate change.
    상세보기
  10. Somekh Sasson ; Ghosh Debabrata ; Adams Bret W., Integrated electrodeposition and chemical-mechanical polishing tool.
    상세보기
  11. Pang Ben ; Cheung David ; Taylor ; Jr. William N. ; Raoux Sebastien ; Fodor Mark, Method and apparatus for cleaning a vacuum line in a CVD system.
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  12. Wiswesser Andreas Norbert,DEX ; Pan Judon Tony ; Swedek Boguslaw, Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers.
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  13. Wiswesser Andreas Norbert,DEX ; Schoenleber Walter,DEX ; Swedek Boguslaw ; Birang Manoocher, Method and apparatus for determining substrate layer thickness during chemical mechanical polishing.
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  14. Wiswesser Andreas Norbert,DEX ; Schoenleber Walter,DEX ; Swedek Boguslaw, Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing.
    상세보기
  15. Wiswesser Andreas Norbert,DEX ; Pan Judon Tony ; Swedek Boguslaw ; Birang Manoocher, Method and apparatus for optical monitoring in chemical mechanical polishing.
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  16. Cheung David ; Raoux Sebastien ; Huang Judy H. ; Taylor ; Jr. William N. ; Fodor Mark ; Fairbairn Kevin, Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions.
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  17. Archie Charles N. ; Rogers Steven R.,ILX ; Solecky Eric P., Method for astigmatism correction in charged particle beam systems.
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  18. Menaker Mina,ILX ; Veldman Andrei,ILX, Method for determining a profile quality grade of an inspected feature.
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  19. Thilderkvist AnnaLena ; Comita Paul B. ; Waldhauer Ann P., Method for in-situ cleaning of surfaces in a substrate processing chamber.
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  20. Kumar Ajay ; Khan Anisul ; Chinn Jeffrey D ; Podlesnik Dragan, Method for plasma etching at a high etch rate.
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  21. Xia Li-Qun ; Pokharrna Himanshu ; Lim Tian-Hoe, Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process.
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  22. Joyce Richard J. ; Wei Ronghua ; Kubena Randall L. ; Doty Robert E., Method of in-situ displacement/stress control in electroplating.
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  23. Holzapfel Paul ; Schlueter James ; Karlsrud Chris ; Lin Warren, Methods and apparatus for detecting removal of thin film layers during planarization.
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  24. Raoux Sebastien ; Tanaka Tsutomu ; Kelkar Mukul ; Ponnekanti Hari ; Fairbairn Kevin ; Cheung David, Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment.
    상세보기
  25. Pang Ben ; Cheung David ; Taylor ; Jr. William N. ; Raoux Sebastien ; Fodor Mark, Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment.
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  26. Waldhauer Ann P. ; Carlson David K. ; Comita Paul B., Permanently mounted reference sample for a substrate measurement tool.
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  27. Dotan Noam,ILX ; Serulnik Sergio,ILX ; Shachal Dubi,ILX, SEM image enhancement using narrow band detection and color assignment.
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  28. Khan Anisul ; Kumar Ajay ; Chinn Jeffrey D. ; Podlesnik Dragan, Self cleaning method of forming deep trenches in silicon substrates.
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  29. Nulman Jaim, Semiconductor processing techniques.
    상세보기
  30. Sandhu Gurtej S. (Boise ID) Doan Trung Tri (Boise ID), System for real-time control of semiconductor wafer polishing including optical monitoring.
    상세보기

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  1. Christian, Craig William; Stice, James Clayton, Advanced process control (APC) of copper thickness for chemical mechanical planarization (CMP) optimization.
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  2. Victory, James; Cordovez, Juan D., Apparatus and method for emulation of process variation induced in split process semiconductor wafers.
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  3. Ritzdorf,Thomas L.; Eudy,Steve L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and method for processing a microelectronic workpiece using metrology.
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  4. McHugh, Paul R.; Wilson, Gregory J.; Woodruff, Daniel J., Apparatus and methods for electrochemical processing of microfeature wafers.
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  5. McHugh, Paul R.; Wilson, Gregory J.; Woodruff, Daniel J., Apparatus and methods for electrochemical processing of microfeature wafers.
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  6. Basol, Bulent M.; Aksu, Serdar, Composition control for photovoltaic thin film manufacturing.
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  7. Weidman, Timothy W.; Wijekoon, Kapila P.; Zhu, Zhize; Gelatos, Avgerinos V. (Jerry); Khandelwal, Amit; Shanmugasundram, Arulkumar; Yang, Michael X.; Mei, Fang; Moghadam, Farhad K., Contact metallization scheme using a barrier layer over a silicide layer.
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  8. Grover, Jason A.; Sze-To, Mark K., Creating a process recipe based on a desired result.
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  9. Dhas, Arul; Boumatar, Kareem; Ramsayer, Christopher James, Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas.
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  10. Augustyniak, Edward; Ramsayer, Christopher James; Singhal, Akhil N.; Boumatar, Kareem, Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates.
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  11. Anderson, Timothy A.; McGlenn, Tim; Eudy, Steve L., Distributed power supplies for microelectronic workpiece processing tools.
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  12. Liu, Chih Pang; Gong, Hao Ming; Hsu, Hsien Jung; Chen, I-Chun; Chou, Tse An; Jann, Larry, Dynamic contamination control of equipment controlled by a split runcard.
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  13. Lien, Chen-Kuang; Chiu, Lun-Chieh; Chang, Yu-Min, Electrochemical plating.
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  14. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
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  15. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
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  16. Farrar,Paul A., Electronic apparatus having a core conductive structure within an insulating layer.
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  17. Chong, Fu Chiung; Kao, Andrew; McKay, Douglas; Litza, Anna; Modlin, Douglas; Mok, Sammy; Parekh, Nitin; Swiatowiec, Frank John; Shan, Zhaohui, High density interconnect system having rapid fabrication cycle.
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  18. Chong, Fu Chiung; Kao, Andrew; McKay, Douglas; Litza, Anna; Modlin, Douglas; Mok, Sammy; Parekh, Nitin; Swiatowiec, Frank John; Shan, Zhaohui, High density interconnect system having rapid fabrication cycle.
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  19. Farrar,Paul A., Hplasma treatment.
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  20. Farrar, Paul A., Integrated circuit and seed layers.
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  21. Farrar,Paul A., Integrated circuit and seed layers.
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  22. Owczarz,Aleksander; Gotkis,Yehiel; Hemker,Dave; Kistler,Rodney, Integration of sensor based metrology into semiconductor processing tools.
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  23. Chong, Fu Chiung; Mok, Sammy, Massively parallel interface for electronic circuit.
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  24. Adams, III,Ernest, Method and apparatus for determining product-specific error and tool drift.
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  25. Lopatin,Sergey; Shanmugasundram,Arulkumar; Lubomirsky,Dmitry; Pancham,Ian A., Method for forming CoWRe alloys by electroless deposition.
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  26. Evans, Allen L., Method of reducing interlayer dielectric thickness variation feeding into a planarization process.
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  27. Ahn, Kie Y.; Forbes, Leonard, Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals.
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  28. Ahn,Kie Y.; Forbes,Leonard, Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals.
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  29. Birang,Manoocher; Smekalin,Konstantin Y.; Chan,David A., Methods and apparatus for polishing control.
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  30. Ritzdorf,Thomas L.; Eudy,Steve L.; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Aegerter,Brian; Dundas,Curt; Peace,Steven L., Methods and apparatus for processing microelectronic workpieces using metrology.
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  31. Ahn,Kie Y.; Forbes,Leonard, Methods for making integrated-circuit wiring from copper, silver, gold, and other metals.
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  32. Ahn,Kie Y.; Forbes,Leonard, Methods for making integrated-circuit wiring from copper, silver, gold, and other metals.
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  33. Lubomirsky, Dmitry; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Kovarsky, Nicolay Y.; Wijekoon, Kapila, Process for electroless copper deposition.
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  34. Craig William Christian ; H. Jim Fulford, Run-to-run etch control by feeding forward measured metal thickness.
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  35. Weidman,Timothy W., Ruthenium containing layer deposition method.
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  36. Ahn,Kie Y.; Forbes,Leonard, Selective electroless-plated copper metallization.
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  37. Patton, Evan E.; Cacouris, Theodore; Broadbent, Eliot; Mayer, Steven T., Sequential station tool for wet processing of semiconductor wafers.
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  38. Patton, Evan E.; Cacouris, Theodore; Broadbent, Eliot; Mayer, Steven T., Sequential station tool for wet processing of semiconductor wafers.
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  39. Patton, Evan E.; Cacouris, Theodore; Broadbent, Eliot; Mayer, Steven T., Sequential station tool for wet processing of semiconductor wafers.
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  40. D'Ambra,Allen L.; Shanmugasundram,Arulkumar; Yang,Michael X.; Rabinovich,Yevgeniy (Eugene); Lubomirsky,Dmitry, Slim cell platform plumbing.
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  41. Farrar, Paul A., Structures and methods to enhance copper metallization.
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  42. Farrar, Paul A., Structures and methods to enhance copper metallization.
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  43. Farrar,Paul A., Structures and methods to enhance copper metallization.
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  44. Farrar,Paul A., Structures and methods to enhance copper metallization.
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  45. Kang, Hu; LaVoie, Adrien, Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging.
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  46. Kang, Hu; LaVoie, Adrien, Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging.
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  47. Mok, Sammy; Chong, Fu Chiung; Milter, Roman, Systems for testing and packaging integrated circuits.
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  48. Tran,Minh Q., Thermal annealing for Cu seed layer enhancement.
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  49. Mok,Yeuk Fai Edwin; Nguyen,Son T., Two position anneal chamber.
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