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Method for forming cavities in a semiconductor substrate by implanting atoms 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/425
출원번호 US-0600162 (2000-09-18)
우선권정보 FR-0001172 (1998-02-02)
국제출원번호 PCT/FR99/00197 (1999-02-01)
§371/§102 date 20000918 (20000918)
국제공개번호 WO99/39378 (1999-08-05)
발명자 / 주소
  • Andre-Jacques Auberton-Herve FR
출원인 / 주소
  • S.O.I. Tec Silicon on Insulator Technologies FR
대리인 / 주소
    Jacobson Holman, PLLC
인용정보 피인용 횟수 : 44  인용 특허 : 7

초록

The invention concerns a method for treating substrates, in particular semiconductors, by implanting atoms so as to produce a substrate of cavities at a controlled depth, characterized in that it comprises steps which consists in: implanting atoms in the substrate at a first depth, to obtain a first

대표청구항

1. A process for treating substrates, especially semiconductor substrates, by atom implantation for the purpose of creating cavities in a substrate at a controlled depth, comprising the steps of:implanting atoms into the substrate at a first depth, in order to obtain a first atom concentration at sa

이 특허에 인용된 특허 (7)

  1. Gardner Mark I. ; Wristers Derick J. ; Dawson Robert ; Fulford ; Jr. H. Jim ; Hause Frederick N. ; Michael Mark W. ; Moore Bradley T., Method of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor device.
  2. Aspar Bernard,FRX ; Biasse Beatrice,FRX ; Bruel Michel,FRX, Method of obtaining a thin film of semiconductor material.
  3. Lim Desmond R. (Singapore SGX) Rafferty Conor Stefan (Summit NJ), Process for reducing transient diffusion of dopant atoms.
  4. Hanson David R. ; Huston ; III Hance H. ; Srikrishnan Kris V., Process for restoring rejected wafers in line for reuse as new.
  5. Bruel Michel,FRX, Process for the manufacture of thin films of semiconductor material.
  6. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  7. Dearnaley Geoffrey, Suppression of transient enhanced diffusion in ion implanted silicon.

이 특허를 인용한 특허 (44)

  1. Pinnington, Thomas Henry; Zahler, James M.; Park, Young-Bae; Ladous, Corinne; Olson, Sean, Bonded intermediate substrate and method of making same.
  2. Pinnington, Thomas Henry; Zahler, James M.; Park, Young-Bae; Tsai, Charles; Ladous, Corinne; Atwater, Jr., Harry A.; Olson, Sean, Bonded intermediate substrate and method of making same.
  3. Braley, Carole; Mazen, Frédéric, Detachment of a self-supporting layer of silicon <100>.
  4. Gonzalez, Fernando; Mouli, Chandra, Device having conductive material disposed in a cavity formed in an isolation oxide disposed in a trench.
  5. Joly, Jean-Pierre; Ulmer, Laurent; Parat, Guy, Integrated circuit on high performance chip.
  6. Sadaka, Mariam; Radu, Ionut, Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods.
  7. Henley, Francois J.; Lamm, Albert; Adibi, Babak, Method and structure for thick layer transfer using a linear accelerator.
  8. Roberds, Brian; Colinge, Cindy; Doyle, Brian, Method for bonding and debonding films using a high-temperature polymer.
  9. Fournel, Franck; Moriceau, Hubert; Lagahe, Christelle, Method for making a stressed structure designed to be dissociated.
  10. Deguet, Chrystel; Clavelier, Laurent, Method for making a thin-film element.
  11. Tauzin, Aurélie; Dechamp, Jérôme; Mazen, Frédéric; Madeira, Florence, Method for preparing thin GaN layers by implantation and recycling of a starting substrate.
  12. Nguyen, Nguyet-Phuong; Cayrefourcq, Ian; Lagahe-Blanchard, Christelle; Bourdelle, Konstantin; Tauzin, Aurélie; Fournel, Franck, Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation.
  13. Barge,Thierry; Auberton Herve,Andr챕; Aga,Hiroji; Tate,Naoto, Method for treating substrates for microelectronics and substrates obtained according to said method.
  14. Aga,Hiroji; Mitani,Kiyoshi, Method of fabricating SOI wafer.
  15. Brüderl, Georg; Eichler, Christoph; Strauss, Uwe, Method of fabricating a quasi-substrate wafer and semiconductor body fabricated using such a quasi-substrate wafer.
  16. Ghyselen, Bruno; Letertre, Fabrice, Method of fabricating substrates, in particular for optics, electronics or optoelectronics.
  17. Maleville,Christophe, Method of increasing the area of a useful layer of material transferred onto a support.
  18. Maleville,Christophe, Method of increasing the area of a useful layer of material transferred onto a support.
  19. Maleville,Christophe, Method of increasing the area of a useful layer of material transferred onto a support.
  20. Gonzalez, Fernando; Mouli, Chandra, Method of manufacturing devices having vertical junction edge.
  21. Deguet, Chrystel; Clavelier, Laurent; Dechamp, Jerome, Method of transferring a thin film onto a support.
  22. Fournel, Franck, Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer.
  23. Atwater, Jr.,Harry A.; Zahler,James M., Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby.
  24. Atwater, Jr.,Harry A.; Zahler,James M., Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby.
  25. Ries, Michael J.; Libbert, Jeffrey Louis; Lottes, Charles R., Methods for preparing layered semiconductor structures.
  26. Sadaka, Mariam; Radu, Ionut, Methods of transferring layers of material in 3D integration processes and related structures and devices.
  27. Atwater, Jr., Harry A.; Zahler, James; Morral, Anna Fontcuberta i; Olson, Sean, Multi-junction solar cells and methods of making same using layer transfer and bonding techniques.
  28. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Process for the transfer of a thin film comprising an inclusion creation step.
  29. Barge,Thierry; Auberton Herve,Andr챕; Aga,Hiroji; Tate,Naoto, Process for treating substrates for the microelectronics industry, and substrates obtained by this process.
  30. Ramamurthy, Sundar; Hegedus, Andreas G.; Thakur, Randhir, Processing multilayer semiconductors with multiple heat sources.
  31. Sorabji, Khurshed; Ranish, Joseph Michael; Aderhold, Wolfgang; Hunter, Aaron Muir; Lerner, Alexander N., Rapid thermal processing chamber with shower head.
  32. Gadkaree,Kishor Purushottam, Semiconductor on glass insulator made using improved ion implantation process.
  33. Cherekdjian, Sarko, Semiconductor structure made using improved multiple ion implantation process.
  34. Cherekdjian, Sarko, Semiconductor structure made using improved multiple ion implantation process.
  35. Cherekdjian, Sarko, Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process.
  36. Cherekdjian, Sarko, Semiconductor structure made using improved simultaneous multiple ion implantation process.
  37. Ogura, Atsushi, Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods.
  38. Moriceau, Hubert; Aspar, Bernard; Margail, Jacques, Stacked structure and production method thereof.
  39. Ramachandran,Balasubramanian; Ranish,Joseph Michael; Jallepally,Ravi; Ramamurthy,Sundar; Achutharaman,Raman; Haas,Brian; Hunter,Aaron, Tailored temperature uniformity.
  40. Sorabji, Khurshed; Lerner, Alexander; Ranish, Joseph; Hunter, Aaron; Adams, Bruce; Behdjat, Mehran; Ramanujam, Rajesh, Temperature measurement and control of wafer support in thermal processing chamber.
  41. Tauzin,Aur��lie, Thin film splitting method.
  42. Gonzalez,Fernando; Mouli,Chandra, Transistor having vertical junction edge and method of manufacturing the same.
  43. Atwater, Jr.,Harry A.; Zahler,James M.; Morral,Anna Fontcubera I, Wafer bonded epitaxial templates for silicon heterostructures.
  44. Atwater, Jr.,Harry A.; Zahler,James M.; Morral,Anna Fontcuberta i, Wafer bonded virtual substrate and method for forming the same.
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