초록 ▼

A field-effect transistor is made with electrodes (2, 4, 5) and isolators (3) in vertically provided layers, such that at least the electrodes (4, 5) and the isolators (3) form a step (6) oriented vertically relative to the first electrode (2) or the substrate (1). Implemented as a junction field-ef

A field-effect transistor is made with electrodes (2, 4, 5) and isolators (3) in vertically provided layers, such that at least the electrodes (4, 5) and the isolators (3) form a step (6) oriented vertically relative to the first electrode (2) or the substrate (1). Implemented as a junction field-effect transistor (JFET) or a metal-oxide semiconducting field-effect transistor (MOSFET) the electrodes (2, 5) forming respectively the drain and source electrode of the field-effect transistor or vice versa and the electrode (4) the gate electrode of the field-effect transistor. Over the layers in the vertical step (6) an amorphous, polycrystalline or microcrystalline inorganic or organic semiconductor material is provided and forms the active semiconductor of the transistor contacting the gate electrode (8) directly or indirectly and forming a vertically oriented transistor channel (9) of the p or n type between the first (2) and the second (5) electrode. In a method for fabrication of a field effect transistor a vertical step (6) is formed by a means of a photolithographic process and a soluble amorphous active semiconductor material (8) is deposited over the first electrode (2) and the vertical step (6) such that a vertically oriented transistor channel between the drain and source electrode (2, 5) is obtained. In a JFET the semiconductor material (8) contacts the gate electrode (4) directly. In a MOSFET a vertically oriented gate isolator (7) is provided between the gate electrode (4) and the semiconductor material (8).

대표청구항 ▼

1. A field-effect transistor forming a junction field-effect transistor (JFET) with substantially vertical geometry, wherein the transistor comprises a planar substrate of non-conducting material, a layer of conducting material which comprises a first electrode provided on the substrate, a layer of

1. A field-effect transistor forming a junction field-effect transistor (JFET) with substantially vertical geometry, wherein the transistor comprises a planar substrate of non-conducting material, a layer of conducting material which comprises a first electrode provided on the substrate, a layer of isolating material which forms a first isolator provided over the first electrode, a layer of conducting material which forms a second electrode provided over the first isolator, a further layer of isolating material which forms a second isolator provided over the second electrode, a layer of conducting material which forms a third electrode provided over the second isolator, said first and third electrode respectively comprising the drain and source electrode of the transistor or vice versa and said second electrode the gate electrode of the transistor, at least said second and said third electrode and said first and second isolator with the respective layers in stacked configuration forming a step oriented vertically relative to said first electrode and/or said substrate, and a semiconductor material which realizes the active semiconductor of the transistor provided over the exposed portion of said first electrode, said second electrode and said third electrode, said active semiconductor contacting the gate electrode directly and forming a channel between said first and said third electrode.