초록 ▼

In forming a thin film transistor (TFT), a semiconductor region is formed on a glass substrate and then a gate electrode is formed on the semiconductor region through an gate insulating film. After the gate electrode and a gate electrode arrangement extended from the gate electrode is anodized, insu

In forming a thin film transistor (TFT), a semiconductor region is formed on a glass substrate and then a gate electrode is formed on the semiconductor region through an gate insulating film. After the gate electrode and a gate electrode arrangement extended from the gate electrode is anodized, insulators each having approximately rectangular shape are formed on side surfaces of the gate electrode and the gate electrode arrangement. An interlayer insulator is formed on a whole surface, and then the second layer arrangement is formed on the interlayer insulator. In an overlap portion in which the second layer arrangement overlaps the gate electrode and the gate electrode arrangement, since the insulators is formed, a slope is small.

대표청구항 ▼

1. A semiconductor device comprising:an n-channel type thin film transistor comprising a first semiconductor film formed over a substrate having an insulating surface, a pair of source and drain regions of an n-type conductivity in said first semiconductor film, a channel forming region in said firs

1. A semiconductor device comprising:an n-channel type thin film transistor comprising a first semiconductor film formed over a substrate having an insulating surface, a pair of source and drain regions of an n-type conductivity in said first semiconductor film, a channel forming region in said first semiconductor film, at least one lightly doped region with a dose amount of 5.times.1014 atoms/cm2 or less formed between said channel forming region and at least one of said source and drain regions, a first gate insulating film adjacent to said channel forming region and a first gate electrode adjacent to said channel forming region with said first gate insulating film interposed therebetween; and a p-channel type thin film transistor connected to said n-channel type thin film transistor, said p-channel type thin film transistor comprising a second semiconductor film formed over said substrate, a pair of source and drain regions of a p-type conductivity in said second semiconductor film, a channel forming region between said source and drain regions in said second semiconductor film, a second gate insulating film adjacent to said channel forming region and a second gate electrode adjacent to said channel forming region with said second gate insulating film interposed therebetween, wherein said p-channel type thin film transistor has no lightly doped region in said second semiconductor film.