초록 ▼

One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising re

One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.

대표청구항 ▼

1. A method for filling sub-micron features on a substrate, comprising:a) reactive precleaning the substrate; b) depositing a barrier layer on the substrate using high density plasma physical vapor deposition; c) depositing a seed layer over the barrier layer using high density plasma physical vapor

1. A method for filling sub-micron features on a substrate, comprising:a) reactive precleaning the substrate; b) depositing a barrier layer on the substrate using high density plasma physical vapor deposition; c) depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and d) electro-chemically depositing a metal using an electrolyte comprising CuSO4 having a molar concentration between about 0.5 M and about 1.1 M, HCl at a concentration between about 10 ppm and about 1000 ppm, a carrier additive at a concentration between about 5 ml/l and about 40 ml/l, and H2SO4 having a concentration less than about 0.4 percent, and applying a first current density during a first deposition period followed by a second current density of between about 10 and 80 mA/cm2 during a second period.