초록 ▼

An interconnect structure and barrier layer for electrical interconnections is described incorporating a layer of TaN in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also

An interconnect structure and barrier layer for electrical interconnections is described incorporating a layer of TaN in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also described as a barrier layer. The invention overcomes the problem of Cu diffusion into materials desired to be isolated during temperature anneal at 500.degree. C.

대표청구항 ▼

1. An interconnect structure comprising:a first insulation layer having an upper and lower surface and having a plurality of grooves formed in said upper surface, some of said grooves having regions extending to said lower surface to expose respective conducting surfaces in a second interconnect str

1. An interconnect structure comprising:a first insulation layer having an upper and lower surface and having a plurality of grooves formed in said upper surface, some of said grooves having regions extending to said lower surface to expose respective conducting surfaces in a second interconnect structure below said first insulation layer, a liner including a layer of TaN hexagonal phase formed on the sidewalls and bottom of said plurality of grooves and on said exposed respective conducting surfaces; and a metal formed in said plurality of grooves to substantially fill said plurality of grooves.