초록 ▼

A method of fabricating MicroElectroMechanical systems. The method includes: providing a substrate in which electrical interconnections and a sacrificial layer have been formed, forming a release mask including germanium, etching exposed sacrificial material, and removing the release mask. The perfo

A method of fabricating MicroElectroMechanical systems. The method includes: providing a substrate in which electrical interconnections and a sacrificial layer have been formed, forming a release mask including germanium, etching exposed sacrificial material, and removing the release mask. The performance of MicroElectroMechanical devices is improved by 1) integrating electronics on the same substrate as the mechanical elements, 2) increasing the proximity of electronics and mechanical elements, 3) increasing the undercut of a release etch to reduce or eliminate etch holes or to allow circuit elements to be undercut, 4) increasing the yield and reliability of the MEMS release processes. In addition to released mechanical structures, the invention also provides a means for forming circuits such as a bandgap reference as a released MEMS element. Forming a bandgap circuit as a released MEMS element may improve reference voltage performance by allowing resistive heating of the circuit region to a constant, elevated temperature independent of the substrate temperature.

대표청구항 ▼

1. A method for forming released mechanical structures on the same substrate as protected regions, the method comprising the steps of:(a) providing a substrate having protected regions, a first surface, and a sacrificial layer, said sacrificial layer including silicon dioxide; (b) depositing a prote

1. A method for forming released mechanical structures on the same substrate as protected regions, the method comprising the steps of:(a) providing a substrate having protected regions, a first surface, and a sacrificial layer, said sacrificial layer including silicon dioxide; (b) depositing a protective layer including germanium onto said first surface; (c) photolithographically defining a release region in said protective layer where a mechanical structure will be released; (d) removing portions of said protective layer including germanium at said release regions defined in said step (c), leaving remaining portions; (e) releasing a microstructure by etching at least a portion of the sacrificial layer using an etchant including hydrogen fluoride; and (f) removing remaining portions of said protective layer including germanium.