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A method for forming a patterned oxygen containing plasma etchable layer. There is first provided a substrate. There is then formed upon the substrate a blanket oxygen containing plasma etchable layer. There is then formed upon the blanket oxygen containing plasma etchable layer a blanket hard mask

A method for forming a patterned oxygen containing plasma etchable layer. There is first provided a substrate. There is then formed upon the substrate a blanket oxygen containing plasma etchable layer. There is then formed upon the blanket oxygen containing plasma etchable layer a blanket hard mask layer. There is then formed upon the blanket hard mask layer a patterned photoresist layer. There is then etched while employing a first plasma etch method in conjunction with the patterned photoresist layer as a first etch mask layer the blanket hard mask layer to form a patterned hard mask layer. There is then etched while employing a second plasma etch method in conjunction with at least the patterned hard mask layer as a second etch mask layer the blanket oxygen containing plasma etchable layer to form a patterned oxygen containing plasma etchable layer. The second plasma etch method employs a second etchant gas composition comprising: (1) an oxygen containing etchant gas which upon plasma activation provides an active oxygen etching species; and (2) boron trichloride.

대표청구항 ▼

1. A method for forming a patterned oxygen containing plasma etchable layer comprising:providing a substrate; forming upon the substrate a blanket oxygen containing plasma etchable layer; forming upon the blanket oxygen containing plasma etchable layer a blanket hard mask layer; forming upon the bla

1. A method for forming a patterned oxygen containing plasma etchable layer comprising:providing a substrate; forming upon the substrate a blanket oxygen containing plasma etchable layer; forming upon the blanket oxygen containing plasma etchable layer a blanket hard mask layer; forming upon the blanket hard mask layer a patterned photoresist layer; etching, while employing a first plasma etch method in conjunction with the patterned photoresist layer as a first etch mask layer, the blanket hard mask layer to form a patterned hard mask layer; and etching, while employing a second plasma etch method in conjunction with at least the patterned hard mask layer as a second etch mask layer, the blanket oxygen containing plasma etchable layer to form a patterned oxygen containing plasma etchable layer, the second plasma etch method employing a second etchant gas composition comprising: an oxygen containing etchant gas which upon plasma activation provides an active oxygen etching species; and boron trichloride.