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Hollow cathode sputter source 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/35
출원번호 US-0771890 (2001-01-30)
발명자 / 주소
  • Paul Stephen McLeod
출원인 / 주소
  • Seagate Technology LLC
대리인 / 주소
    McDermott, Will & Emery
인용정보 피인용 횟수 : 15  인용 특허 : 21

초록

A magnetically enhanced hollow cathode sputter source for providing a sputtered particle flux containing an increased proportion of ionized target material comprises a four-sided, box-shaped chamber open at the top and defining an interior space. Each of the interiorly facing surfaces of the chamber

대표청구항

1. A hollow cathode sputter source providing a sputtered particle flux having an increased ionization probability, comprising:(a) a box-shaped chamber defining an interior space, said chamber being open at the top and comprising a flat, horizontal bottom wall and a first pair of opposing, flat, vert

이 특허에 인용된 특허 (21)

  1. Sebastiano Francesco (Termoli ITX) Massarelli Liberto (Vasto ITX), Apparatus and process for the deposition of a thin layer on a transparent substrate.
  2. Wegmann Urs (Oberschan CHX) Rille Eduard (Dornbirn ATX), Apparatus for coating materials by cathode sputtering.
  3. Scherer Michael,DEX, Apparatus for coating substrates by cathode sputtering with a hollow target.
  4. Aichert Hans (Hanau am Main DEX) Gegenwart Rainer (Rodermark DEX) Kukla Reiner (Hanau am Main DEX) Wilmes Klaus (Bad Orb DEX) Kieser Jorg (Forchheim DEX), Cathode sputtering apparatus on the magnetron principle with a hollow cathode and a cylindrical target.
  5. Nelson Carl W. (Hayward CA) Weir Richard D. (Agoura Hills CA), Circularly symmetric sputtering apparatus with hollow-cathode plasma devices.
  6. Kadokura Sadao,JPX, Facing target type sputtering apparatus.
  7. Class Walter H. (Yonkers NY) Hieronymi Robert G. (Sloatsburg NY) Hurwitt Steven D. (Park Ridge NJ), Focusing magnetron sputtering apparatus.
  8. Henshaw William F. (Street MD) White John R. (Darlington MD) Niiler Andrus (Bel Air MD), Hollow cathode discharge source of metal vapor.
  9. Cuomo Jerome J. (Lake Lincolndale NY) Kaufman Harold R. (Fort Collins CO) Rossnagel Stephen M. (White Plains NY), Hollow cathode enhanced magnetron sputter device.
  10. Bumble Bruce (Croton-on-Hudson NY) Cuomo Jerome J. (Lake Lincolndale NY) Logan Joseph S. (Poughkeepsie NY) Rossnagel Steven M. (White Plains NY), Hollow cathode enhanced plasma for high rate reactive ion etching and deposition.
  11. Inokuti Yukio (Chiba JPX) Ohkubo Osamu (Takaza JPX), Hollow cathode gun and deposition device for ion plating process.
  12. Horwitz Christopher M. (Summer Hill AUX), Hollow cathode sputter etcher.
  13. Rust Ray D. (Berkeley Heights NJ), Hollow cathode type magnetron apparatus construction.
  14. Rose Peter W. (San Carlos CA), Hollow-cathode magnetron and method of making thin films.
  15. Hattori Noriaki,JPX ; Yajitate Keiko,JPX ; Nakajima Motoo,JPX ; Murakami Seiji,JPX, Method for analyzing intracellular components.
  16. Hershcovitch, Ady; Prelec, Krsto, Negative ion source with hollow cathode discharge plasma.
  17. Helmer John C. (260 S. Balsamina Way Palo Alto CA 94028) Lai Kwok F. (959 Van Auken Cir. Palo Alto CA 94303) Anderson Robert L. (3169 Emerson Palo Alto CA 94306), Physical vapor deposition employing ion extraction from a plasma.
  18. Henshaw William F. (10530 Greene Dr. Lorton VA 22079), Rectangular cavity magnetron sputtering vapor source.
  19. Yamanishi Hitoshi (Higashiosaka JPX) Aokura Isamu (Osaka JPX) Yokoyama Masahide (Hirakata JPX) Takisawa Takahiro (Moriguchi JPX), Sputtering apparatus and method.
  20. Kukla Reiner (Hanau DEX) Sichmann Eggo (Gelnhausen DEX) Fritsche Wolf-Eckart (Kleinostheim DEX), Sputtering cathode for coating substrates in cathode sputtering apparatus.
  21. Glocker David A. (Henrietta NY), Sputtering process employing an enclosed sputtering target.

이 특허를 인용한 특허 (15)

  1. Madocks,John E., Beam plasma source.
  2. Nagashima, Makoto, Dual hexagonal shaped plasma source.
  3. Nagashima, Makoto, Dual hexagonal shaped plasma source.
  4. Madocks,John E., Dual plasma beam sources and method.
  5. Wang, Zhongchun; Kurman, Eric; Kozlowski, Mark; Scobey, Mike; Dixon, Jeremy; Pradhan, Anshu, Electrochromic devices.
  6. Kailasam, Sridhar Karthik; Friedman, Robin; Pradhan, Anshu A.; Rozbicki, Robert T., Fabrication of low defectivity electrochromic devices.
  7. Kailasam, Sridhar; Friedman, Robin; Pradhan, Anshu; Rozbicki, Robert T., Fabrication of low defectivity electrochromic devices.
  8. Kozlowski, Mark; Kurman, Eric; Wang, Zhongchun; Scobey, Mike; Dixon, Jeremy; Pradhan, Anshu; Rozbicki, Robert, Fabrication of low defectivity electrochromic devices.
  9. Kozlowski, Mark; Kurman, Eric; Wang, Zhongchun; Scobey, Mike; Dixon, Jeremy; Pradhan, Anshu; Rozbicki, Robert, Fabrication of low defectivity electrochromic devices.
  10. Dawson-Elli, David Francis; DeMartino, Steven Edward; Hluck, Laura L, Glass laminated articles and layered articles.
  11. Cesare Callegari, Alessandro; Chaudhari, Praveen; Doyle, James Patrick; Galligan, Eileen Ann; Kato, Yoshimine; Lacey, James Andrew; Lien, Shui-Chih Alan; Lu, Minhua; Nakano, Hiroki; Odahara, Shuichi, Ion gun deposition and alignment for liquid-crystal applications.
  12. Madocks,John, Magnetron plasma source.
  13. Guo, George Xinsheng, Magnetron source for deposition on large substrates.
  14. Nagashima, Makoto, Systems and methods for magnetron deposition.
  15. Strong, Fabian; Bhatnagar, Yashraj; Dixit, Abhishek Anant; Martin, Todd; Rozbicki, Robert T., Thin-film devices and fabrication.
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