초록 ▼

A new method is provided for the creation of an inductive over the surface of a semiconductor substrate. A first layer of metal is created in a layer of dielectric, a second layer of metal is created overlying the first layer of metal. The first layer of metal combined with the second layer of metal

A new method is provided for the creation of an inductive over the surface of a semiconductor substrate. A first layer of metal is created in a layer of dielectric, a second layer of metal is created overlying the first layer of metal. The first layer of metal combined with the second layer of metal form an inductor of increased height, reducing the resistivity of the inductor, increasing the Q value of the inductor. The new method of creating an inductor can be combined with creating contact points that connect to contact points in the active region of the surface of a semiconductor substrate.

대표청구항 ▼

1. A method of forming a high-Q inductor over the surface of a semiconductor substrate, comprising:providing a semiconductor substrate, points of electrical contact having been provided in or on the surface of said substrate, said points of electrical contact to be first points of electrical contact

1. A method of forming a high-Q inductor over the surface of a semiconductor substrate, comprising:providing a semiconductor substrate, points of electrical contact having been provided in or on the surface of said substrate, said points of electrical contact to be first points of electrical contact in an active surface regions of the surface of said substrate overlying and being in electrical contact with semiconductor devices formed in or on the surface of said substrate, said points of electrical contact further to be second points of electrical contact to which an overlying inductor is to be connected; depositing a first etch stop layer of the surface of said substrate; depositing a first layer of dielectric over the first etch stop layer; creating first openings in said first layer of dielectric and said first etch stop layer that align with and expose said first points of electrical contact provided in or on the surface of said substrate, further creating second openings in said first layer of dielectric and said first etch stop layer that align with and expose said second points of electrical contact provided in or on the surface of said substrate; depositing a first layer of conductive material over the surface of said first layer of dielectric, filling said first openings, creating first conductive plugs, further filling said second openings, creating second conductive plugs; depositing a second etch stop layer over the surface of said first layer of dielectric, thereby including the surface of said first and said second conductive plugs; creating first openings in said second etch stop layer that align with said first conductive plugs, further creating openings in said second etch stop layer that align with said second conductive plugs; depositing a second layer of conductive material over the surface of said second etch stop layer, filling said first and second openings created in said second etch stop layer; planarizing the surface of said second layer of conductive material, creating first extended first conductive plugs that penetrate said first etch stop layer it addition to said first layer of dielectric in addition to penetrating said second etch stop layer and that align with said first points of electrical contact provided in or on the surface of said substrate, further creating first extended second conductive plugs that penetrate said first etch stop layer in addition to said first layer of dielectric in addition to penetrating said second etch stop layer and that align with said second points of electrical contact provided in or on the surface of said substrate; depositing a second layer of dielectric over the surface of said second etch stop layer, including the surface of said first extended first conductive plugs and said first extended second conductive plugs; creating openings in said second layer of dielectric that align with said first extended first conductive plugs, further creating openings in said second layer of dielectric that align with said first extended second conductive plugs; depositing a third conductive layer over the surface of said second layer of dielectric, including said openings created in said second layer of dielectric; and planarizing the surface of said third conductive layer, creating second extended first conductive plugs and second extended second conductive plugs, said second extended first conductive plugs and second extended second electric plugs penetrating said first etch stop layer, said first layer of dielectric, said second etch stop layer and said second layer of dielectric, whereby furthermore said second extended first conductive plugs align with said first points of contact provided in or on the surface of said substrate, whereby furthermore said second extended second conductive plugs align with said second points of electrical contact provided in or on the surface of said substrate.