초록 ▼

A reinforcing system and method of fabrication for a semiconductor integrated circuit bond pad comprises a first dielectric layer or stack disposed under the bond pad; at least one second dielectric layer or stack disposed under the first dielectric layer; and a reinforcing metal structure disposed

A reinforcing system and method of fabrication for a semiconductor integrated circuit bond pad comprises a first dielectric layer or stack disposed under the bond pad; at least one second dielectric layer or stack disposed under the first dielectric layer; and a reinforcing metal structure disposed into the second dielectric layer such that the patterns of the metal structure and the second dielectric layer comprise a uniformly flat interface towards the first dielectric layer. The patterns of the metal structure and the second dielectric layer comprise feature sizes and fine pitches used in the integrated circuit.

대표청구항 ▼

1. A reinforcing system for a semiconductor integrated circuit having a damnascene metallization and copper bond pads consisting essentially of: a first dielectric layer disposed under said bonds pads; at least one second dielectric layer selected from HSQ, polymides, aerogels and parylenes disposed

1. A reinforcing system for a semiconductor integrated circuit having a damnascene metallization and copper bond pads consisting essentially of: a first dielectric layer disposed under said bonds pads; at least one second dielectric layer selected from HSQ, polymides, aerogels and parylenes disposed under said first dielectric layer; and a reinforcing structure disposed into said second dielectric layer such that the patterns of said second dielectric layer comprise a uniformly flat interface with said first dielectric layer.