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특허 상세정보

Method of forming copper interconnection utilizing aluminum capping film

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/44   
미국특허분류(USC) 438/601; 438/132; 438/612; 438/654
출원번호 US-0411266 (1999-10-04)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Robert A. Rodriguez
인용정보 피인용 횟수 : 73  인용 특허 : 6
초록

A mostly copper-containing interconnect (126) overlies a semiconductor device substrate (100), and a transitional metallurgy structure (312, 508, 716, 806) that includes an aluminum-containing film (200, 506, 702, 802) contacts a portion of the mostly copper-containing interconnect. In one embodiment, the transitional metallurgy is formed over a portion of a bond pad (128). In an alternative embodiment, the transitional metallurgy includes an energy alterable fuse portion (710) that electrically contacts two conductive regions (712 and 714), and in yet a...

대표
청구항

1. A method for forming a semiconductor device, comprising:forming a first mostly copper-containing bond pad overlying a semiconductor device substrate; forming a chromium-containing adhesion film over the mostly copper-containing bond pad; forming an aluminum-containing capping film overlying the chromium-containing adhesion film; forming at least two conductive regions over the semiconductor device substrate; and connecting the aluminum-containing capping film to the at least two conductive regions and rendering the connection laser alterable.

이 특허를 인용한 특허 피인용횟수: 73

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