초록 ▼

A mostly copper-containing interconnect (126) overlies a semiconductor device substrate (100), and a transitional metallurgy structure (312, 508, 716, 806) that includes an aluminum-containing film (200, 506, 702, 802) contacts a portion of the mostly copper-containing interconnect. In one embodimen

A mostly copper-containing interconnect (126) overlies a semiconductor device substrate (100), and a transitional metallurgy structure (312, 508, 716, 806) that includes an aluminum-containing film (200, 506, 702, 802) contacts a portion of the mostly copper-containing interconnect. In one embodiment, the transitional metallurgy is formed over a portion of a bond pad (128). In an alternative embodiment, the transitional metallurgy includes an energy alterable fuse portion (710) that electrically contacts two conductive regions (712 and 714), and in yet another embodiment, the transitional metallurgy is formed over a copper-containing edge seal portion (809).

대표청구항 ▼

1. A method for forming a semiconductor device, comprising:forming a first mostly copper-containing bond pad overlying a semiconductor device substrate; forming a chromium-containing adhesion film over the mostly copper-containing bond pad; forming an aluminum-containing capping film overlying the c

1. A method for forming a semiconductor device, comprising:forming a first mostly copper-containing bond pad overlying a semiconductor device substrate; forming a chromium-containing adhesion film over the mostly copper-containing bond pad; forming an aluminum-containing capping film overlying the chromium-containing adhesion film; forming at least two conductive regions over the semiconductor device substrate; and connecting the aluminum-containing capping film to the at least two conductive regions and rendering the connection laser alterable.