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Method of producing strained microelectronic and/or optical integrated and discrete devices 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
  • H01L-021/46
출원번호 US-0710127 (2000-11-09)
발명자 / 주소
  • Rona E. Belford
대리인 / 주소
    Howard & Howard
인용정보 피인용 횟수 : 87  인용 특허 : 7

초록

A method of producing a strained crystalline semiconductor microelectronic device(s). Microelectronic device(s) are formed within a membrane. The method includes the steps of straining a membrane along at least one axis and bonding the membrane to a base substrate.

대표청구항

1. A method of producing a strained crystalline semiconductor microelectronic device, including the steps of:applying a tensile strain to a membrane along at least one axis, the microelectronic device being formed within the membrane; and bonding the membrane to a base substrate.

이 특허에 인용된 특허 (7)

  1. Laderman Stephen (Menlo Park CA) Scott Martin (San Francisco CA) Kamins Theodore I. (Palo Alto CA) Hoyt Judy L. (Palo Alto CA) King Clifford A. (Palo Alto CA) Gibbons James F. (Palo Alto CA) Noble Da, Fabricating a semiconductor device with strained Si1-xGex layer.
    상세보기
  2. Jeffers Frederick J. (Escondido CA), High sensitivity semiconductor strain gauge.
    상세보기
  3. Jakowetz Wolf,DEX ; Fischer Helmut,DEX, Method for producing a plurality of semiconductor components.
    상세보기
  4. Abe Takao (Annaka JPX) Nakazato Yasuaki (Koshoku JPX) Uchiyama Atsuo (Koshoku JPX), Method of producing semiconductor substrate.
    상세보기
  5. Kamiyama Satoshi,JPX ; Suzuki Masakatsu,JPX ; Uenoyama Takeshi,JPX ; Ohnaka Kiyoshi,JPX ; Takamori Akira,JPX ; Mannoh Masaya,JPX ; Kidoguchi Isao,JPX ; Adachi Hideto,JPX ; Ishibashi Akihiko,JPX ; Fuk, Semiconductor light emitting element and method for fabricating the same.
    상세보기
  6. Taylor ; Allen L., Strain sensor employing bi layer piezoelectric polymer.
    상세보기
  7. McKee Rodney Allen ; Walker Frederick Joseph, Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material.
    상세보기

이 특허를 인용한 특허 (87)

  1. Forbes, Leonard, Bonded strained semiconductor with a desired surface orientation and conductance direction.
    상세보기
  2. Currie,Matthew T., Control of strain in device layers by prevention of relaxation.
    상세보기
  3. Currie,Matthew T., Control of strain in device layers by selective relaxation.
    상세보기
  4. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
    상세보기
  5. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
    상세보기
  6. Yamazaki,Shunpei; Murakami,Masakazu; Takayama,Toru; Maruyama,Junya, Display device having a curved surface.
    상세보기
  7. Wu,Kenneth C.; Fitzgerald,Eugene A.; Taraschi,Gianni; Borenstein,Jeffrey T., Etch stop layer system.
    상세보기
  8. Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Flexible display panel having curvature that matches curved surface of vehicle part.
    상세보기
  9. Forbes, Leonard, Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers.
    상세보기
  10. Forbes, Leonard, Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers.
    상세보기
  11. Currie, Matthew T., Hybrid fin field-effect transistor structures and related methods.
    상세보기
  12. Henley, Francois J., Layer transfer of films utilizing controlled propagation.
    상세보기
  13. Henley, Francois J., Layer transfer of films utilizing controlled shear region.
    상세보기
  14. Forbes, Leonard, Localized compressive strained semiconductor.
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  15. Forbes, Leonard, Localized compressive strained semiconductor.
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  16. Forbes, Leonard, Localized compressive strained semiconductor.
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  17. Forbes, Leonard, Localized compressive strained semiconductor.
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  18. Forbes,Leonard, Localized strained semiconductor on insulator.
    상세보기
  19. Forbes,Leonard, Localized strained semiconductor on insulator.
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  20. Henley,Francois J.; Kirk,Harry R., Manufacturing strained silicon substrates using a backing material.
    상세보기
  21. Henley, Francois J., Method and structure for fabricating solar cells using a thick layer transfer process.
    상세보기
  22. Henley,Francois J.; Ong,Philip James; Malik,Igor J.; Kirk,Harry R., Method and system for fabricating strained layers for the manufacture of integrated circuits.
    상세보기
  23. Henley,Francois J.; Ong,Philip James; Malik,Igor J., Method and system for lattice space engineering.
    상세보기
  24. Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Method for fabricating a semiconductor device by bonding a layer to a support with curvature.
    상세보기
  25. Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Method for fabricating a semiconductor device by bonding a layer to a support with curvature.
    상세보기
  26. Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Method for fabricating a semiconductor device by transferring a layer to a support with curvature.
    상세보기
  27. Yamazaki,Shunpei; Murakami,Masakazu; Takayama,Toru; Maruyama,Junya, Method for fabricating a semiconductor device by transferring a layer to a support with curvature.
    상세보기
  28. Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Method for fabricating light emitting device and method for fabricating liquid crystal display device.
    상세보기
  29. Henley,Francois J., Method for fabricating semiconductor devices using strained silicon bearing material.
    상세보기
  30. Cheng,Zhiyuan; Fitzgerald,Eugene A.; Antoniadis,Dimitri A., Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers.
    상세보기
  31. Fitzgerald,Eugene; Currie,Matthew, Methods for fabricating strained layers on semiconductor substrates.
    상세보기
  32. Langdo, Thomas A.; Currie, Matthew T.; Hammond, Richard; Lochtefeld, Anthony J.; Fitzgerald, Eugene A., Methods for forming III-V semiconductor device structures.
    상세보기
  33. Langdo, Thomas A.; Currie, Matthew T.; Hammond, Richard; Lochtefeld, Anthony J.; Fitzgerald, Eugene A., Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain.
    상세보기
  34. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes.
    상세보기
  35. Currie,Matthew T., Methods of forming hybrid fin field-effect transistor structures.
    상세보기
  36. Bhattacharyya, Arup; Forbes, Leonard; Farrar, Paul A., Methods of forming strained semiconductor channels.
    상세보기
  37. Langdo, Thomas A.; Currie, Matthew T.; Hammond, Richard; Lochtefeld, Anthony J.; Fitzgerald, Eugene A., Methods of forming strained-semiconductor-on-insulator device structures.
    상세보기
  38. Lochtefeld,Anthony J.; Langdo,Thomas A.; Hammond,Richard; Currie,Matthew T.; Braithwaite,Glyn; Fitzgerald,Eugene A., Methods of forming strained-semiconductor-on-insulator finFET device structures.
    상세보기
  39. Forbes,Leonard, Micro-mechanically strained semiconductor film.
    상세보기
  40. Forbes,Leonard, Micro-mechanically strained semiconductor film.
    상세보기
  41. Forbes,Leonard, Micro-mechanically strained semiconductor film.
    상세보기
  42. Forbes,Leonard, Micromechanical strained semiconductor by wafer bonding.
    상세보기
  43. Forbes,Leonard, Micromechanical strained semiconductor by wafer bonding.
    상세보기
  44. Malik, Igor J.; Kang, Sien G.; Fuerfanger, Martin; Kirk, Harry; Flat, Ariel; Current, Michael Ira; Ong, Philip James, Non-contact etch annealing of strained layers.
    상세보기
  45. Ong,Philip; Henley,Francois; Malik,Igor, Non-contact etch annealing of strained layers.
    상세보기
  46. Wallis, David John, P-type semiconductor devices.
    상세보기
  47. Yamazaki, Shunpei; Suzuki, Kunihiko, Peeling method and peeling apparatus.
    상세보기
  48. Yasumoto, Seiji; Sato, Masataka; Eguchi, Shingo; Suzuki, Kunihiko, Peeling method, semiconductor device, and peeling apparatus.
    상세보기
  49. Cheng, Zhi-Yuan; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; Hoyt, Judy L., Process for producing semiconductor article using graded epitaxial growth.
    상세보기
  50. Henley, Francois J.; Brailove, Adam, Race track configuration and method for wafering silicon solar substrates.
    상세보기
  51. Yamazaki,Shunpei; Takayama,Toru, Semiconductor device and manufacturing method thereof.
    상세보기
  52. Arao, Tatsuya, Semiconductor device and method of manufacturing the same.
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  53. Arao, Tatsuya, Semiconductor device and method of manufacturing the same.
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  54. Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Semiconductor device having aluminum-containing layer between two curved substrates.
    상세보기
  55. Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Semiconductor device having aluminum-containing layer between two curved substrates.
    상세보기
  56. Yamazaki, Shunpei; Takayama, Toru, Semiconductor device including a flexible support.
    상세보기
  57. Cheng, Zhiyuan; Fitzgerald, Eugene A.; Antoniadis, Dimitri A., Semiconductor device structure.
    상세보기
  58. Bhattacharyya, Arup; Forbes, Leonard; Farrar, Paul A., Semiconductor device with strained channels.
    상세보기
  59. Forbes, Leonard, Semiconductor on insulator structure.
    상세보기
  60. Forbes,Leonard, Semiconductors bonded on glass substrates.
    상세보기
  61. Forbes,Leonard, Silicon oxycarbide substrates for bonded silicon on insulator.
    상세보기
  62. Forbes,Leonard, Strained Si/SiGe structures by ion implantation.
    상세보기
  63. Forbes,Leonard, Strained Si/SiGe structures by ion implantation.
    상세보기
  64. Forbes,Leonard, Strained Si/SiGe/SOI islands and processes of making same.
    상세보기
  65. Forbes,Leonard, Strained Si/SiGe/SOI islands and processes of making same.
    상세보기
  66. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained germanium-on-insulator device structures.
    상세보기
  67. Forbes, Leonard; Geusic, Joseph E.; Akram, Salman, Strained semiconductor by full wafer bonding.
    상세보기
  68. Forbes, Leonard; Geusic, Joseph E.; Akram, Salman, Strained semiconductor by full wafer bonding.
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  69. Forbes, Leonard; Geusic, Joseph E.; Akram, Salman, Strained semiconductor by full wafer bonding.
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  70. Forbes,Leonard; Geusic,Joseph E.; Akram,Salman, Strained semiconductor by full wafer bonding.
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  71. Forbes,Leonard, Strained semiconductor by wafer bonding with misorientation.
    상세보기
  72. Forbes, Leonard; Farrar, Paul A., Strained semiconductor, devices and systems and methods of formation.
    상세보기
  73. Forbes,Leonard; Farrar,Paul A., Strained semiconductor, devices and systems and methods of formation.
    상세보기
  74. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator device structures.
    상세보기
  75. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator device structures.
    상세보기
  76. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator device structures with elevated source/drain regions.
    상세보기
  77. Langdo,Thomas A.; Currie,Matthew T.; Braithwaite,Glyn; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator finFET device structures.
    상세보기
  78. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
    상세보기
  79. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
    상세보기
  80. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
    상세보기
  81. Brailove, Adam; Liu, Zuqin; Henley, Francois J.; Lamm, Albert J., Techniques for forming thin films by implantation with reduced channeling.
    상세보기
  82. Forbes,Leonard, Ultra-thin semiconductors bonded on glass substrates.
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  83. Forbes,Leonard, Ultra-thin semiconductors bonded on glass substrates.
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  84. Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Vehicle that includes a display panel having a curved surface.
    상세보기
  85. Takayama, Toru; Maruyama, Junya; Goto, Yuugo; Kuwabara, Hideaki; Yamazaki, Shunpei, Vehicle, display device and manufacturing method for a semiconductor device.
    상세보기
  86. Takayama,Toru; Maruyama,Junya; Goto,Yuugo; Kuwabara,Hideaki; Yamazaki,Shunpei, Vehicle, display device and manufacturing method for a semiconductor device.
    상세보기
  87. Forbes,Leonard, Wafer gettering using relaxed silicon germanium epitaxial proximity layers.
    상세보기

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