초록 ▼

A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b

A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90.degree. C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.

대표청구항 ▼

1. A method of fabricating an integrated circuit comprising the steps of:(a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating said substrate

1. A method of fabricating an integrated circuit comprising the steps of:(a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating said substrate containing said coating of said silane-coupling agent at a temperature of about 90.degree. C. or above to provide a modified surface layer to said substrate containing Si-O bonds, said modified surface layer having a greater water contact angle than a non-heated substrate containing a coating of said silane-coupling agent; (c) rinsing said heated substrate with a suitable solvent that is effective in removing any unreacted silane-coupling agent to provide a modified surface that is substantially free of particular matter; and (d) applying a dielectric material to said rinsed surface containing said Si-O.